Datasheet GSIB620, GSIB640, GSIB660, GSIB680 (Vishay) - 3

GSIB620, GSIB640, GSIB660, GSIB680
www.vishay.com Vishay General Semiconductor 1000 100 (°C/W) 100 10 tance (pF) Impedance mal 10 1 nction Capaci u J ansient TherrT 1 0.1 0.1 1 10 100 0.01 0.1 1 10 100 Reverse Voltage (V) t - Heating Time (s) Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance 
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Case Style GSIB-5S
4.6 ± 0.2 3.6 ± 0.2 30 ± 0.3 0.2 0.2 ± ± 3.5 3.2 0.3 ± 20 0.2± + 5 11 2.5 ± 0.2 2.7 ± 0.2 2.2 ± 0.2 0.2 0.5 ± ± 4 5. 17 1 ± 0.1 7.5 0.7 ± 0.1 7.5 10 ± 0.2 ± 0.2 ± 0.2 Revision: 13-Jun-14
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Document Number: 88648 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000