Datasheet SCT3160KLHR (Rohm) - 5
| Hersteller | Rohm |
| Beschreibung | Automotive Grade N-channel SiC power MOSFET |
| Seiten / Seite | 13 / 5 — SCT3160KLHR. Electrical characteristic curves. TSQ50211-SCT3160KLHR. … |
| Dateiformat / Größe | PDF / 963 Kb |
| Dokumentensprache | Englisch |
SCT3160KLHR. Electrical characteristic curves. TSQ50211-SCT3160KLHR. 16.Nov.2018 - Rev.001
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SCT3160KLHR
Datasheet l
Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area 120 100 Operation in this area is limited by RDS(on) ] 100 [W ] P D [A 80 10 : I D t : tion P 60 W = 1μs* rren PW = 10μs* ssipa n Cu PW = 100μs 40 ai 1 PW = 1ms Dr PW = 10ms Power Di 20 Ta = 25ºC Single Pulse *Calculation(PW10μs) 0 0.1 25 75 125 175 0.1 1 10 100 1000 10000 Case Temperature : TC [°C] Drain - Source Voltage : VDS [V] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width 10 ce : 1 istan ] Res /W 0.1 [K 0.01 t Thermal R thJC sien 0.001 Tran Ta = 25ºC Single Pulse 0.00011E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1 Pulse Width : PW [s] www.rohm.com
TSQ50211-SCT3160KLHR
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/12
16.Nov.2018 - Rev.001
Datasheet l
Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area 120 100 Operation in this area is limited by RDS(on) ] 100 [W ] P D [A 80 10 : I D t : tion P 60 W = 1μs* rren PW = 10μs* ssipa n Cu PW = 100μs 40 ai 1 PW = 1ms Dr PW = 10ms Power Di 20 Ta = 25ºC Single Pulse *Calculation(PW10μs) 0 0.1 25 75 125 175 0.1 1 10 100 1000 10000 Case Temperature : TC [°C] Drain - Source Voltage : VDS [V] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width 10 ce : 1 istan ] Res /W 0.1 [K 0.01 t Thermal R thJC sien 0.001 Tran Ta = 25ºC Single Pulse 0.00011E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1 Pulse Width : PW [s] www.rohm.com
TSQ50211-SCT3160KLHR
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/12
16.Nov.2018 - Rev.001