Datasheet 2ED21091S06F (Infineon) - 7

2ED21091S06F 650 V half bridge gate driver with integrated bootstrap diode 4.3 Static electrical characteristics (VCC – COM) = (VB – VS) = 15 V, and TA = 25 °C unless otherwise specified. The VIL, VIH and IIN parameters are referenced to Vss / COM and are applicable to the respective input leads: IN and DT/SD. The VO and IO parameters are referenced to VS / COM and are applicable to the respective output leads HO or LO. The VCCUV parameters are referenced to COM. The VBSUV parameters are referenced to VS. Table 5 Static electrical characteristics Symbol Definition Min. Typ. Max. Units Test Conditions VBSUV+ VBS supply undervoltage positive going 7.6 threshold 8.2 8.9 VBSUV- VBS supply undervoltage negative going 6.7 threshold 7.2 8.1 V VBSUVHY VBS supply undervoltage hysteresis — 1.0 — VCCUV+ VCC supply undervoltage positive going 8.4 9.1 9.8 threshold VCCUV- VCC supply undervoltage negative going 7.5 8.2 8.9 threshold VCCUVHY VCC supply undervoltage hysteresis — 0.9 — ILK High-side floating wel offset supply leakage — 1 12.5 VB = VS = 650 V IQBS Quiescent VBS supply current — 170 — uA VIN = 0 V or 5 V IQCC Quiescent VCC supply current — 600 — VIN = 0 V or 5 V VOH High level output voltage drop, Vcc - VLO , VB - VHO — 0.05 0.2 V IO = 2 mA VOL Low level output voltage drop, VO — 0.02 0.1 Io+mean Mean output current from 3 V to 6 V 180 230 — CL = 22 nF Io+ Peak output current turn-on1 — 290 — V mA O = 0 V Io-mean Mean output current from 12 V to 9 V 450 650 — CL = 22 nF Io- Peak output current turn-off1 — 700 — VO = 15 V VIH Logic “1” input voltage 1.7 2.1 2.4 VIL Logic “0” input voltage 0.7 0.9 1.1 V Vcc = 10 V to 20 V V SD,TH /SD input threshold 0.7 0.9 1.1 IIN+ Input bias current (Output = High) — 25 50 IN = 5 V IIN- Input bias current (Output = Low) — — 10 µA IN = 0 V ISD+ /SD input bias current — — - 400 VDT/SD = 0 V V Bootstrap diode forward voltage between Vcc FBSD and VB — 1 1.2 V I F = 0.3 mA I Bootstrap diode forward current between Vcc FBSD and VB 45 85 125 mA V CC - VB = 4 V RBSD Bootstrap diode resistance 20 30 45 Ω VF1 = 4 V,VF2 = 5 V V Allowable Negative VS pin voltage for IN Signal S propagation to HO — -11 -10 V Vcc = 15 V 1 Not subjected to production test, verified by characterization. Datasheet 7 of 25 V 2.10 www.infineon.com/soi 2019-09-12 Document Outline Features Product summary Potential applications Product validation Ordering information Description 1 Table of contents 2 Block diagram 3 Pin configuration and functionality 3.1 Pin configuration 3.2 Pin functionality 4 Electrical parameters 4.1 Absolute maximum ratings 4.2 Recommended operating conditions 4.3 Static electrical characteristics 4.4 Dynamic electrical characteristics 5 Application information and additional details 5.1 IGBT / MOSFET gate drive 5.2 Switching and timing relationships 5.3 Deadtime 5.4 Matched propagation delays 5.5 Shutdown input 5.6 Input logic compatibility 5.7 Undervoltage lockout 5.8 Bootstrap diode 5.9 Calculating the bootstrap capacitance CBS 5.10 Tolerant to negative tranisents on input pins 5.11 Negative voltage transient tolerance of VS pin 5.12 NTSOA – Negative Transient Safe Operating Area 5.13 Higher headroom for input to output signal transmission with logic operation upto -11 V 5.14 Maximum switching frequency 5.15 PCB layout tips 6 Qualification information0F 7 Related products 8 Package details 9 Part marking information 10 Additional documentation and resources 10.1 Infineon online forum resources 11 Revision history