Datasheet 2ED2108 (4) S06F (J) (Infineon) - 8

2ED2181 (4) S06F (J)2ED2108(4)S06F(J) 650 V half bridge gate driver with integrated bootstrap diode 4.4 Dynamic electrical characteristics VCC = VBS = 15 V, VSS = COM, TA = 25 oC and CL = 1000 pF unless otherwise specified. Table 6 Dynamic electrical characteristics Symbol Definition Min. Typ. Max. Units Test Conditions tON Turn-on propagation delay — 200 300 tOFF Turn-off propagation delay — 200 300 VIN = 0 V or 5 V tR Turn-on rise time — 100 150 ns VS = 0 V tF Turn-off fal time — 35 80 MT Delay matching time (HS & LS turn-on/off) — — 35 350 540 730 RDT = 0 Ω DT Dead time 4 5 6 us RDT = 200 kΩ — 0 70 RDT = 0 MDT Matching Dead time ns — 0 600 RDT = 200 kΩ Datasheet 8 of 24 V 2.10 www.infineon.com/soi 2019-09-12 Document Outline Features Product summary Potential applications Product validation Ordering information Description 1 Table of contents 2 Block diagram 3 Pin configuration and functionality 3.1 Pin configuration 3.2 Pin functionality 4 Electrical parameters 4.1 Absolute maximum ratings 4.2 Recommended operating conditions 4.3 Static electrical characteristics 4.4 Dynamic electrical characteristics 5 Application information and additional details 5.1 IGBT / MOSFET gate drive 5.2 Switching and timing relationships 5.3 Deadtime 5.4 Matched propagation delays 5.5 Input logic compatibility 5.6 Undervoltage lockout 5.7 Bootstrap diode 5.8 Calculating the bootstrap capacitance CBS 5.9 Tolerant to negative tranisents on input pins 5.10 Negative voltage transient tolerance of VS pin 5.11 NTSOA – Negative Transient Safe Operating Area 5.12 Higher headroom for input to output signal transmission with logic operation upto -11 V 5.13 Maximum switching frequency 5.14 PCB layout tips 6 Qualification information0F 7 Related products 8 Package details 9 Part marking information 10 Additional documentation and resources 10.1 Infineon online forum resources 11 Revision history