Datasheet IRLHM620PbF (Infineon) - 5
| Hersteller | Infineon |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 9 / 5 — Fig 12. Fig 13. Fig 14a. Fig 14b. Fig 15a. Fig 15b |
| Dateiformat / Größe | PDF / 542 Kb |
| Dokumentensprache | Englisch |
Fig 12. Fig 13. Fig 14a. Fig 14b. Fig 15a. Fig 15b
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IRLHM620PbF ) 7 500 ) m( J ID = 20A ID e m( c n 6 y TOP 5.8A a g t r 400 12A si e s n BOTTOM 20A e E R 5 e n hc O n 300 e al cr a 4 v uo A S T e - J = 125°C sl 200 ot u - 3 P n i e a l r g D n i , ) S 100 2 n , o( T S S J = 25°C A D E R 1 0 0 2 4 6 8 10 12 25 50 75 100 125 150 V Starting T GS, Gate -to -Source Voltage (V) J , Junction Temperature (°C)
Fig 12.
On– Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current V(BR)DSS tp 15V L DRIVER VDS R G D.U.T + - VDD IAS A 20V IAS t 0.01 p
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback September 25, 2015
Fig 12.
On– Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current V(BR)DSS tp 15V L DRIVER VDS R G D.U.T + - VDD IAS A 20V IAS t 0.01 p
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback September 25, 2015