Datasheet MAX22700D, MAX22700E, MAX22701D, MAX22701E, MAX22702D, MAX22702E (Maxim) - 3

MAX22700D–MAX22702D Ultra-High CMTI MAX22700E–MAX22702E Isolated Gate Drivers
DC Electrical Characteristics (continued)
(VDDA - VGNDA = 5V, VDDB - VSSB = 20V, VGNDA = VSSB = 0V, TA = -40°C to +125°C, unless otherwise noted. Typical values are at TA = +25°C, unless otherwise noted.) (Note 1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
VUVLOBP VDDB rising, relative to GNDB, MAX22700 13 13.3 VUVLOBN VDDB falling, relative to GNDB, MAX22700 11.6 12 Undervoltage-Lockout VUVLOBP VDDB rising, relative to VSSB, MAX22701 13 13.3 Threshold V VUVLOBN VDDB falling, relative to VSSB, MAX22701 11.6 12 VUVLOBP VDDB rising, relative to ADJ, MAX22702 2 2.05 VUVLOBN VDDB falling, relative to ADJ, MAX22702 1.79 1.84 Undervoltage-Lockout MAX22700, MAX22701 1 Threshold Hysteresis VUVLOB_HYST V MAX22702 0.16
SUPPLY CURRENT
A-Side Quiescent VDDA = 5V, INN/EN = VDDA 5 6.5 Supply Current IDDA mA VDDA = 3.3V, INN/EN = VDDA 3 4 V A-Side Active Supply Current I DDA = 5V, fPWM = 1MHz 5 6.5 DDA mA VDDA = 3.3V, fPWM = 1MHz 3 4 B-Side Quiescent Positive Supply Current IDDB INN/EN = VDDA 3.5 6 mA B-Side Active Positive Supply Current IDDB fPWM = 1MHz (Note 2) 6 10 mA B-Side Ground Current IGNDB MAX22700 -25 µA
LOGIC INTERFACE (INP, INN, IN, EN)
Input High Voltage V 0.7 x IH V V DDA Input Low Voltage V 0.3 x IL V V DDA Input Hysteresis V 0.1 x HYS V mV DDA Input Pullup Current (Note 3) IPU INN, EN -10 -5 -1.5 µA Input Pulldown Current (Note 3) IPD INP, IN 1.5 5 10 µA Input Capacitance CIN fPWM = 1MHz 2 pF
ADJ (MAX22702 ONLY)
Input Leakage Current IADJ VDDB - VADJ = 3V -100 100 nA
GATE DRIVER
High-Side Transistor On-Resistance RDSON_H IOUT = -100mA (Note 3) 4.7 Ω Low-Side Transistor I MAX22700/MAX22702 1.25 Ω OUT = 100mA On-Resistance RDSON_L (Note 3) MAX22701 2.5 Ω www.maximintegrated.com Maxim Integrated │ 3