Datasheet SiSF20DN (Vishay) - 6
| Hersteller | Vishay |
| Beschreibung | Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET |
| Seiten / Seite | 8 / 6 — SiSF20DN. TYPICAL CHARACTERISTICS. Notes. Normalized Thermal Transient … |
| Dateiformat / Größe | PDF / 213 Kb |
| Dokumentensprache | Englisch |
SiSF20DN. TYPICAL CHARACTERISTICS. Notes. Normalized Thermal Transient Impedance, Junction-to-Ambient
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SiSF20DN
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title 1 10000 Duty cycle = 0.5 ent 0.2
Notes
ransi 1000 T e v P 0.1 DM pedance ne ne 0.1 m ffecti l I 0.05 t1 1st li a 2nd li t2 ed E erm t1 100 iz h 0.02 1. Duty cycle, D = al T t2 2. Per unit base = R = 63 °C/W thJA Norm 3. T - T = P Z (t) JM A DM thJA 4. Surface mounted Single pulse 0.01 10 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title 1 10000 Duty cycle = 0.5 ent ransi 1000 T e v pedance 0.2 ne ne m ffecti l I 1st li a 2nd li 0.1 ed E erm 100 iz h al T 0.05 Norm 0.02 Single pulse 0.1 10 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76915. S18-1210-Rev. A, 10-Dec-2018
6
Document Number: 76915 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title 1 10000 Duty cycle = 0.5 ent 0.2
Notes
ransi 1000 T e v P 0.1 DM pedance ne ne 0.1 m ffecti l I 0.05 t1 1st li a 2nd li t2 ed E erm t1 100 iz h 0.02 1. Duty cycle, D = al T t2 2. Per unit base = R = 63 °C/W thJA Norm 3. T - T = P Z (t) JM A DM thJA 4. Surface mounted Single pulse 0.01 10 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title 1 10000 Duty cycle = 0.5 ent ransi 1000 T e v pedance 0.2 ne ne m ffecti l I 1st li a 2nd li 0.1 ed E erm 100 iz h al T 0.05 Norm 0.02 Single pulse 0.1 10 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76915. S18-1210-Rev. A, 10-Dec-2018
6
Document Number: 76915 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000