Datasheet SiSF20DN (Vishay)
| Hersteller | Vishay |
| Beschreibung | Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET |
| Seiten / Seite | 8 / 1 — SiSF20DN. Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET. FEATURES. … |
| Dateiformat / Größe | PDF / 213 Kb |
| Dokumentensprache | Englisch |
SiSF20DN. Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET. FEATURES. PowerPAK® 1212-8SCD. APPLICATIONS. PRODUCT SUMMARY
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SiSF20DN
www.vishay.com Vishay Siliconix
Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET FEATURES PowerPAK® 1212-8SCD
• TrenchFET® Gen IV power MOSFET S1 S1 8 • Very low source-to-source on resistance S2 7 S2 6 • Integrated common-drain n-channel MOSFETs S 5 1 in a compact and thermally enhanced package S2 • 100 % Rg and UIS tested • Optimizes circuit layout for bi-directional current flow 1 • Material categorization: for definitions of compliance 3.3 mm 2 G1 please see www.vishay.com/doc?99912 3 D1 4 1 3.3 mm D2 G2
APPLICATIONS
S1 Top View Bottom View • Battery protection switch
PRODUCT SUMMARY
• Bi-directional switch G1 N-Channel 1 MOSFET VS1S2 (V) 60 • Load switch RS1S2(on) max. () at VGS = 10 V 0.0130 • 24 V systems N-Channel 2 MOSFET RS1S2(on) max. () at VGS = 4.5 V 0.0185 G2 Qg typ. (nC) 10.2 g IS1S2 (A) 52 a S Configuration Common - Drain 2
ORDERING INFORMATION
Package PowerPAK 1212-8SCD Lead (Pb)-free and halogen-free SiSF20DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VS1S2 60 V Gate-source voltage VGS ± 20 TC = 25 °C 52 T Continuous drain current (T C = 70 °C 41 J = 150 °C) IS1S2 TA = 25 °C 14 b, c A TA = 70 °C 11 b, c Pulsed drain current (t = 100 μs) IS1S2M 100 TC = 25 °C 69.4 T Maximum power dissipation C = 70 °C 44.4 PS1S2 W TA = 25 °C 5.2 b, c TA = 70 °C 3.3 b, c Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) c 260
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b t 10 s RthJA 19 24 °C/W Maximum junction-to-case (drain) Steady state RthJC 1.4 1.8
Notes
a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8SCD is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 63 °C/W g. Single MOSFET S18-1210-Rev. A, 10-Dec-2018
1
Document Number: 76915 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET FEATURES PowerPAK® 1212-8SCD
• TrenchFET® Gen IV power MOSFET S1 S1 8 • Very low source-to-source on resistance S2 7 S2 6 • Integrated common-drain n-channel MOSFETs S 5 1 in a compact and thermally enhanced package S2 • 100 % Rg and UIS tested • Optimizes circuit layout for bi-directional current flow 1 • Material categorization: for definitions of compliance 3.3 mm 2 G1 please see www.vishay.com/doc?99912 3 D1 4 1 3.3 mm D2 G2
APPLICATIONS
S1 Top View Bottom View • Battery protection switch
PRODUCT SUMMARY
• Bi-directional switch G1 N-Channel 1 MOSFET VS1S2 (V) 60 • Load switch RS1S2(on) max. () at VGS = 10 V 0.0130 • 24 V systems N-Channel 2 MOSFET RS1S2(on) max. () at VGS = 4.5 V 0.0185 G2 Qg typ. (nC) 10.2 g IS1S2 (A) 52 a S Configuration Common - Drain 2
ORDERING INFORMATION
Package PowerPAK 1212-8SCD Lead (Pb)-free and halogen-free SiSF20DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VS1S2 60 V Gate-source voltage VGS ± 20 TC = 25 °C 52 T Continuous drain current (T C = 70 °C 41 J = 150 °C) IS1S2 TA = 25 °C 14 b, c A TA = 70 °C 11 b, c Pulsed drain current (t = 100 μs) IS1S2M 100 TC = 25 °C 69.4 T Maximum power dissipation C = 70 °C 44.4 PS1S2 W TA = 25 °C 5.2 b, c TA = 70 °C 3.3 b, c Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) c 260
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b t 10 s RthJA 19 24 °C/W Maximum junction-to-case (drain) Steady state RthJC 1.4 1.8
Notes
a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8SCD is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 63 °C/W g. Single MOSFET S18-1210-Rev. A, 10-Dec-2018
1
Document Number: 76915 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000