Datasheet 48L512, 48LM01 (Microchip)

48L512/48LM01 512-Kbit/1-Mbit SPI Serial EERAM Serial SRAM Features Package Types (not to scale)
• Unlimited Reads/Unlimited Writes: - Standard serial SRAM protocol - Symmetrical timing for reads and writes
8-Lead SOIC/SOIJ
(Top View) • SRAM Array: - 65,536 x 8 bit (48L512) CS 1 8 VCC - 131,072 x 8 bit (48LM01) SO 2 7 HOLD • High-Speed SPI Interface: VCAP 3 6 SCK - Up to 66 MHz VSS 4 5 SI - Schmitt Trigger inputs for noise suppression • Low-Power CMOS Technology: - Active current: 5 mA (maximum) - Standby current: 200 μA (at 85°C maximum)
Pin Function Table
- Hibernate current: 3 μA (at 85°C maximum)
Name Function Hidden EEPROM Backup Features
CS Chip Select Input • Cell-Based Nonvolatile Backup: SO Serial Data Output - Mirrors SRAM array cell-for-cell V - Transfers all data to/from SRAM cells in CAP External Capacitor parallel (all cells at same time) VSS Ground • Invisible-to-User Data Transfers: SI Serial Data Input - VCC level monitored inside device SCK Serial Clock Input - SRAM automatically saved on power disrupt - SRAM automatically restored on V HOLD Hold Input CC return • 100,000 Backups Minimum (at 85°C) VCC Supply Voltage • 100 Years Retention (at 55°C)
Other Features of the 48L512/48LM01
• Operating Voltage Range: 2.7V-3.6V • Temperature Ranges: - Industrial (I): -40°C to +85°C • ESD Protection: >2,000V
Packages
• 48L512: 8-Lead SOIC • 48LM01: 8-Lead SOIJ  2018-2019 Microchip Technology Inc. DS20006008C-page 1 Document Outline Serial SRAM Features Hidden EEPROM Backup Features Other Features of the 48L512/48LM01 Packages Package Types (not to scale) Pin Function Table General Description Block Diagram Normal Device Operation Vcc Power-Off Event 1.0 Electrical Characteristics Absolute Maximum Ratings† TABLE 1-1: DC Characteristics TABLE 1-2: AC Characteristics TABLE 1-3: AC Test Conditions 2.0 Pin Descriptions TABLE 2-1: Pin Function Table 2.1 Chip Select (CS) 2.2 Serial Output (SO) 2.3 Serial Input (SI) 2.4 Serial Clock (SCK) 2.5 Hold (HOLD) 3.0 Memory Organization 3.1 Data Array Organization 3.2 16-Byte Nonvolatile User Space 3.3 Device Registers 3.3.1 STATUS Register 4.0 Functional Description FIGURE 4-1: SPI Mode 0 and Mode 3 4.1 Interfacing the 48L512/48LM01 on the SPI Bus 4.1.1 Selecting the Device 4.1.2 Sending Data to the Device 4.1.3 Receiving Data from the Device 4.2 Device Opcodes 4.2.1 Serial Opcode 4.2.2 Hold Function FIGURE 4-2: Hold Mode 5.0 Write Enable and Disable 5.1 Write Enable Instruction (WREN) FIGURE 5-1: WREN Waveform 5.2 Write Disable Instruction (WRDI) FIGURE 5-2: WRDI Waveform 6.0 STATUS Register 6.1 Block Write-Protect Bits TABLE 6-2: Block Write-Protect Bits 6.2 Write Enable Latch 6.3 Ready/Busy Status Latch 6.4 Read STATUS Register (RDSR) FIGURE 6-1: RDSR Waveform 6.5 Write STATUS Register (WRSR) FIGURE 6-2: WRSR Waveform 7.0 Read Operations 7.1 Reading from the SRAM (READ) FIGURE 7-1: Read SRAM (READ) Waveform 8.0 Write Commands 8.1 Write Instruction Sequences 8.1.1 SRAM Byte Write FIGURE 8-1: SRAM Byte Write Waveform 8.1.2 Continuous Write FIGURE 8-2: Continuous SRAM Write Waveform 9.0 Nonvolatile User Space Access 9.1 Write Nonvolatile User Space (WRNUR) 9.2 Read Nonvolatile User Space (RDNUR) 10.0 Secure Operations 10.1 Secure Write 10.2 Secure Read TABLE 10-1: Secure Write Bits 11.0 Store/Recall Operations 11.1 Automatic Store on Any Power Disruption 11.2 Automatic Recall to SRAM 11.3 Software Store Command FIGURE 11-1: Software Store 11.4 Software Recall Command FIGURE 11-2: Software Recall 11.5 Polling Routine FIGURE 11-3: Polling Flow FIGURE 11-4: AutoStore/AutoRecall Scenarios (with ASE = 0, Array Modified) FIGURE 11-5: AutoStore/AutoRecall Scenarios (with ASE = 1 or Array Not Modified) 12.0 Hibernation FIGURE 12-1: Hibernate Waveform 13.0 Trip Voltage 13.1 Power Switchover 14.0 Packaging Information 14.1 Package Marking Information Appendix A: Revision History Product ID System Trademarks Worldwide Sales