Datasheet GAN063-650WSA (Nexperia) - 2
Hersteller | Nexperia |
Beschreibung | 650 V, 50 mΩ Gallium Nitride (GaN) FET |
Seiten / Seite | 12 / 2 — Nexperia. GAN063-650WSA. 650 V, 50 mΩ Gal ium Nitride (GaN) FET. 5. … |
Revision | 27112019 |
Dateiformat / Größe | PDF / 289 Kb |
Dokumentensprache | Englisch |
Nexperia. GAN063-650WSA. 650 V, 50 mΩ Gal ium Nitride (GaN) FET. 5. Pinning information Table 2. Pinning information. Pin. Symbol
Modelllinie für dieses Datenblatt
Textversion des Dokuments
Nexperia GAN063-650WSA 650 V, 50 mΩ Gal ium Nitride (GaN) FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol
1 G gate mb D 2 S source 3 D drain mb S mounting base; connected to source G S 1 2 3
TO-247 (SOT429)
aaa-028116
6. Ordering information Table 3. Ordering information Type number Package Name Description Version
GAN063-650WSA TO-247 plastic, single-ended through-hole package; 3 leads; 5.45 mm SOT429 pitch; 20.45 mm x 15.6 mm x 4.95 mm body
7. Marking Table 4. Marking codes Type number Marking code
GAN063-650WSA GAN063-650WSA GAN063-650WSA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. Al rights reserved
Product data sheet 27 November 2019 2 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Application information 12. Package outline 13. Legal information Contents