Datasheet 6N138, 6N139 (Toshiba) - 3

6N138,6N139
Electrical Characteristics Over Recommended Temperature (Ta = 0°C to 70°C, unless otherwise noted)
Characteristics Symbol Test Condition Min (*5)Typ. Max Unit IF = 0.5 mA, VO = 0.4 V 400 800  VCC = 4.5 V Current transfer 6N139 CTR(*) % ratio (Note 5, 6) I 500 900  F = 1.6 mA, VO = 0.4 V VCC = 4.5V 6N138 300 600  IF = 1.6 mA, IO = 6.4 mA  0.1 0.4 VCC = 4.5 V I 6N139 F = 5 mA, IO = 15 mA  0.1 0.4 Logic low output VCC = 4.5 V V V voltage (Note 6) OL IF = 12 mA, IO = 24 mA  0.2 0.4 VCC = 4.5 V I 6N138 F = 1.6 mA, IO = 4.8 mA  0.1 0.4 VCC = 4.5 V Logic high output 6N139 IF = 0 mA, VO = VCC = 18 V  0.05 100 I μA current (Note 6) OH(*) 6N138 IF = 0 mA, VO = VCC = 7 V  0.05 250 Logic low supply current I I F = 1.6 mA, VO = Open  0.2  mA (Note 6) CCL VCC = 5 V Logic high supply current I (Note 6) CCH IF = 0 mA, VO = Open, VCC = 5 V  10  nA Input forward voltage VF(*) IF = 1.6 mA, Ta = 25 °C  1.65 1.7 V Input reverse breakdown voltage BVR(*) IR = 10 μA, Ta = 25 °C 5   V Temperature coefficient of forward voltage ΔVF / ΔTa IF = 1.6 mA  −1.9  mV / °C Input capacitance CIN f = 1 MHz, V F= 0 V  60  pF V Resistance (input−output) R I−O = 500 V (Note 7), I−O  1012  Ω R.H.≤ 60 % Capacitance (input−output) CI−O f = 1 MHz, V = 0 V (Note 7)  0.6  pF (**) JEDEC registered data. (*5) All typical values are at Ta = 25 °C and VCC = 5 V, unless otherwise noted. © 2019 3 2019-06-10 Toshiba Electronic Devices & Storage Corporation