Datasheet IPB230N06L3 G, IPP230N06L3 G (Infineon) - 7
| Hersteller | Infineon |
| Beschreibung | OptiMOS Power Transistors |
| Seiten / Seite | 10 / 7 — IPB230N06L3 G IPP230N06L3 G. 13 Avalanche characteristics. 14 Typ. gate … |
| Dateiformat / Größe | PDF / 305 Kb |
| Dokumentensprache | Englisch |
IPB230N06L3 G IPP230N06L3 G. 13 Avalanche characteristics. 14 Typ. gate charge. 100. [V]. [A] 10. 0.1. 1000. gate [nC]. AV [µs]
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IPB230N06L3 G IPP230N06L3 G 13 Avalanche characteristics 14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD
100 12
30 V
10
12 V 48 V
8
150 °C 100 °C 25 °C
[V] [A] 10 6 GS I AS V 4 2 0 1 0 2 4 6 8 10 12 14 16 18 0.1 1 10 100 1000 Q t gate [nC] AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70 V
GS Q g
65 [V] )S 60 BR(DSV
V gs(th)
55
Q g(th) Q sw
Q gate
Q gs Q gd
50 -60 -20 20 60 100 140 180 T j [°C]
Rev. 2.2 page 7 2010-01-22
I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD
100 12
30 V
10
12 V 48 V
8
150 °C 100 °C 25 °C
[V] [A] 10 6 GS I AS V 4 2 0 1 0 2 4 6 8 10 12 14 16 18 0.1 1 10 100 1000 Q t gate [nC] AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70 V
GS Q g
65 [V] )S 60 BR(DSV
V gs(th)
55
Q g(th) Q sw
Q gate
Q gs Q gd
50 -60 -20 20 60 100 140 180 T j [°C]
Rev. 2.2 page 7 2010-01-22