Datasheet IPB230N06L3 G, IPP230N06L3 G (Infineon) - 4
| Hersteller | Infineon |
| Beschreibung | OptiMOS Power Transistors |
| Seiten / Seite | 10 / 4 — IPB230N06L3 G IPP230N06L3 G. 1 Power dissipation. 2 Drain current. [W] … |
| Dateiformat / Größe | PDF / 305 Kb |
| Dokumentensprache | Englisch |
IPB230N06L3 G IPP230N06L3 G. 1 Power dissipation. 2 Drain current. [W] 20. [A] 15. tot. 100. 150. 200. C [°C]. 3 Safe operating area
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Textversion des Dokuments
IPB230N06L3 G IPP230N06L3 G 1 Power dissipation 2 Drain current
P tot=f(T C) I D=f(T C); V GS≥10 V
40 30 25 30 20 [W] 20 [A] 15 tot I D P 10 10 5 0 0 0 50 100 150 200 0 50 100 150 200 T C [°C] T C [°C] 3 Safe operating area 4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T
103 101
limited by on-state
102
resistance 1 µs 0.5 10 µs 100 µs
[A]
0.2
101 [K/W] 100
1 ms
I D C thJ
10 ms
Z
0.1 DC 0.05
100
0.02 0.01 single pulse
10-1 10-1 102 101 100 10-1 V DS [V] t p [s]
Rev. 2.2 page 4 2010-01-22
P tot=f(T C) I D=f(T C); V GS≥10 V
40 30 25 30 20 [W] 20 [A] 15 tot I D P 10 10 5 0 0 0 50 100 150 200 0 50 100 150 200 T C [°C] T C [°C] 3 Safe operating area 4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T
103 101
limited by on-state
102
resistance 1 µs 0.5 10 µs 100 µs
[A]
0.2
101 [K/W] 100
1 ms
I D C thJ
10 ms
Z
0.1 DC 0.05
100
0.02 0.01 single pulse
10-1 10-1 102 101 100 10-1 V DS [V] t p [s]
Rev. 2.2 page 4 2010-01-22