Datasheet DSEE29-12CC (IXYS) - 2

DSEE29-12CC Fast Diode Ratings Symbol Definition Conditions min. typ. max. Unit V
max. non-repetitive reverse blocking voltage T 600 V J = 25°C V
RSM V
max. repetitive reverse blocking voltage T V J = 25°C 600 V
RRM I
reverse current, drain current 600 T µA V J = 25°C 500
R
V R = V V 600 150 R = V T 1 mA V J = °C
V
forward voltage drop I = 3 0 A T = 25°C 1.62 V
F
F VJ I 60 F = A 1.95 V I F = 3 0 A T V J = 1 5 0 °C 1.27 V I F = 6 0 A 1.58 V
I
average forward current
FAV
T 130 T = 1 7 5°C C = °C 30 A VJ rectangular d = 0.5
V
threshold voltage T = 1 7 5°C 1.00 V
F0
VJ for power loss calculation only
r
slope resistance 10 m
F
Ω
R
thermal resistance junction to case 0.9 K/W
thJC R
thermal resistance case to heatsink 0.50 K/W
thCH P
total power dissipation T C = 25°C 165 W
tot I
max. forward surge current t = 10 ms; (50 Hz), sine; V 200 A R = 0 V T = 45°C
FSM
VJ
C
junction capacitance V pF R = 4 0 0 V f = 1 MHz T V J = 25°C 26
J I
max. reverse recovery current
RM
T = 25 °C 17 A VJ IF = 30 A; V = 300 V R TVJ = 100 °C 29 A
t
reverse recovery time -di /dt = 600 A/µs T = 25 °C
rr
F VJ 35 ns TVJ = 100 °C 90 ns IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160916b © 2016 IXYS all rights reserved