Datasheet STW88N65M5-4 (STMicroelectronics) - 4

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Electrical characteristics STW88N65M5-4 2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit
Drain-source V(BR)DSS I breakdown voltage D = 1 mA, VGS = 0 V 650 V VGS = 0 V, VDS = 650 V 1 Zero gate voltage IDSS µA drain current VGS = 0 V, VDS = 650 V, 100 TC = 125 °C Gate-body leakage IGSS V current DS = 0 V, VGS = ± 25 V ± 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V Static drain-source on- RDS(on) V resistance GS = 10 V, ID = 42 A 0.024 0.029 Ω
Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance - 8825 - C V oss Output capacitance DS = 100 V, f = 1 MHz, - 223 - pF VGS = 0 V Reverse transfer Crss - 11 - capacitance Equivalent C (1) o(tr) capacitance time - 778 - related VGS = 0 V, VDS = 0 to 520 V pF Equivalent C (2) o(er) capacitance energy - 202 - related Intrinsic gate RG f = 1 MHz open drain - 1.79 - Ω resistance Qg Total gate charge V - 204 - DD = 520 V, ID = 42 A, Q V gs Gate-source charge GS = 10 V - 51 - nC (see Figure 16) Qgd Gate-drain charge - 84 - 1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 4/13 Doc ID 027754 Rev 1 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. Static Table 5. Dynamic Table 6. Switching times Table 7. Source-drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized V(BR)DSS vs temperature Figure 14. Switching losses vs gate resistance 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 4 Package information 4.1 TO247-4 package information Figure 21. TO247-4 package outline Table 8. TO247-4 package mechanical data 5 Revision history Table 9. Document revision history