Datasheet BTA24, BTB24, BTA25 BTA26, BTB26, T25 (STMicroelectronics) - 3

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BTA24, BTB24, BTA25, BTA26, BTB26, T25 Characteristics Table 4. Electrical characteristics (Tj = 25° C, unless otherwise specified), standard (4 quadrants), BTB24...B, BTA25...B, BTA26...B, BTB26...B Symbol Test Conditions Quadrant Value Unit
I - II - III 50 I (1) GT MAX. mA VD = 12 V RL = 33 Ω IV 100 VGT ALL MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125° C ALL MIN. 0.2 V I (2) H ) IT = 500 mA MAX. 80 mA I - III - IV 70 IL IG = 1.2 IGT MAX. mA II 160 dV/dt(2) VD = 67 %VDRM gate open Tj = 125° C MIN. 500 V/µs (dV/dt)c (2) (dI/dt)c = 13.3 A/ms Tj = 125° C MIN. 10 V/µs 1. minimum IGT is guaranted at 5% of IGT max. 2. for both polarities of A2 referenced to A1.
Table 5. Static characteristics Symbol Test Conditions Value Unit
V (1) TM ITM = 35 A tp = 380 µs Tj = 25° C MAX. 1.55 V V (1) t0 Threshold voltage Tj = 125° C MAX. 0.85 V R (1) d Dynamic resistance Tj = 125° C MAX. 16 mΩ I T 5 µA DRM j = 25° C V MAX. I DRM = VRRM RRM Tj = 125° C 3 mA 1. for both polarities of A2 referenced to A1.
Table 6. Thermal resistance Symbol Parameter Value Unit
TOP 3 0.6 D2PAK / TO-220AB 0.8 Rth(j-c) Junction to case (AC) ° C/W RD91 Insulated / TOP3 Insulated 0.9 TO-220AB Insulated 1.7 (1)S = 1 cm² D2PAK 45 Rth(j-a) Junction to ambient TOP3 / TOP3 Insulated 50 ° C/W TO-220AB / TO-220AB Insulated 60 1. S = Copper surface under tab. 3/12 Document Outline Table 1. Device summary 1 Characteristics Table 2. Absolute maximum ratings Table 3. Electrical characteristics (Tj = 25˚ C, unless otherwise specified), Snubberless and logic level (3 quadrants) T25, BTA/BTB24...W, BTA25...W, BTA26...W Table 4. Electrical characteristics (Tj = 25˚ C, unless otherwise specified), standard (4 quadrants), BTB24...B, BTA25...B, BTA26...B, BTB26...B Table 5. Static characteristics Table 6. Thermal resistance Figure 1. Maximum power dissipation versus RMS on-state current (full cycle) Figure 2. RMS on-state current versus case temperature (full cycle) Figure 3. D2PAK RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm) (full cycle) Figure 4. Relative variation of thermal impedance versus pulse duration Figure 5. On-state characteristics (maximum values) Figure 6. Surge peak on-state current versus number of cycles Figure 7. Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms and corresponding value of I2t Figure 8. Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values) Figure 9. Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) Figure 10. Relative variation of critical rate of decrease of main current versus Tj Figure 11. D2PAK thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 µm) 2 Ordering information scheme Figure 12. BTA and BTB series Figure 13. T25 series 3 Package information Table 7. D2PAK dimensions Figure 14. D2PAK footprint dimensions (in millimeters) Table 8. RD91 dimensions Table 9. TOP3 (insulated and non_insulated) dimensions Table 10. TO-220AB (insulated and non-insulated) dimensions 4 Ordering information Table 11. Ordering information 5 Revision history Table 12. Revision history