Data Brief AP64501 (Diodes) - 3
| Hersteller | Diodes |
| Beschreibung | 3.8V To 40V, 5A Low Iq Synchronous Buck with Programmable Soft-start Time |
| Seiten / Seite | 5 / 3 — Request Datasheet. AP64501. Thermal Resistance. Symbol. Parameter. … |
| Dateiformat / Größe | PDF / 429 Kb |
| Dokumentensprache | Englisch |
Request Datasheet. AP64501. Thermal Resistance. Symbol. Parameter. Rating. Unit. Recommended Operating Conditions. Min. Max
Modelllinie für dieses Datenblatt
Textversion des Dokuments
Request Datasheet AP64501 Thermal Resistance
(Note 6)
Symbol Parameter Rating Unit
θJA Junction to Ambient SO-8EP 45 °C/W θJC Junction to Case SO-8EP 5 °C/W Note: 6. Test condition for SO-8EP: Device mounted on FR-4 substrate, four-layer PC board, 2oz copper, with minimum recommended pad layout.
Recommended Operating Conditions
(Note 7) (At TA = +25°C, unless otherwise specified.)
Symbol Parameter Min Max Unit
VIN Supply Voltage 3.8 40 V VOUT Output Voltage 0.8 VIN V TA Operating Ambient Temperature Range -40 +85 °C TJ Operating Junction Temperature Range -40 +125 °C Note: 7. The device function is not guaranteed outside of the recommended operating conditions.
Electrical Characteristics
(At TA = +25°C, VIN = 12V, unless otherwise specified. Min/Max limits apply across the recommended ambient temperature range, -40°C to +85°C, and input voltage range, 3.8V to 40V, unless otherwise specified.)
Symbol Parameter Test Conditions Min Typ Max Unit
ISHDN Shutdown Supply Current VEN = 0V — 1 3 μA IQ Quiescent Supply Current VEN = Floating, VFB = 1.0V — 25 — μA VIN Undervoltage Rising Threshold — — 3.5 3.7 V UVLO VIN Undervoltage Hysteresis — — 400 — mV RDS(ON)1 High-Side Power MOSFET On-Resistance (Note 8) — — 45 — mΩ RDS(ON)2 Low-Side Power MOSFET On-Resistance (Note 8) — — 20 — mΩ IPEAK_LIMIT HS Peak Current Limit (Note 8) — 6.8 8 9.2 A IVALLEY_LIMIT LS Valley Current Limit (Note 8) — — 9 — A IPFMPK PFM Peak Current Limit — — 950 — mA IZC Zero Cross Current Threshold — — 0 — mA fSW Oscillator Frequency — 510 570 630 kHz tON_MIN Minimum On-Time — — 100 — ns VFB Feedback Voltage CCM 792 800 808 mV VEN_H EN Logic High Threshold — — 1.18 1.25 V VEN_L EN Logic Low Threshold — 1.03 1.09 — V VEN = 1.5V — 5.5 — μA IEN EN Input Current VEN = 1V 1 1.5 2 μA tSS Soft-Start Time CSS = 10nF — 4 — ms TSD Thermal Shutdown (Note 8) — — 160 — °C THys Thermal Shutdown Hysteresis (Note 8) — — 25 — °C Note: 8. Compliance to the datasheet limits is assured by one or more methods: production test, characterization, and/or design. 3 of 5 AP64501 Databrief October 2019
www.diodes.com
© Diodes Incorporated
(Note 6)
Symbol Parameter Rating Unit
θJA Junction to Ambient SO-8EP 45 °C/W θJC Junction to Case SO-8EP 5 °C/W Note: 6. Test condition for SO-8EP: Device mounted on FR-4 substrate, four-layer PC board, 2oz copper, with minimum recommended pad layout.
Recommended Operating Conditions
(Note 7) (At TA = +25°C, unless otherwise specified.)
Symbol Parameter Min Max Unit
VIN Supply Voltage 3.8 40 V VOUT Output Voltage 0.8 VIN V TA Operating Ambient Temperature Range -40 +85 °C TJ Operating Junction Temperature Range -40 +125 °C Note: 7. The device function is not guaranteed outside of the recommended operating conditions.
Electrical Characteristics
(At TA = +25°C, VIN = 12V, unless otherwise specified. Min/Max limits apply across the recommended ambient temperature range, -40°C to +85°C, and input voltage range, 3.8V to 40V, unless otherwise specified.)
Symbol Parameter Test Conditions Min Typ Max Unit
ISHDN Shutdown Supply Current VEN = 0V — 1 3 μA IQ Quiescent Supply Current VEN = Floating, VFB = 1.0V — 25 — μA VIN Undervoltage Rising Threshold — — 3.5 3.7 V UVLO VIN Undervoltage Hysteresis — — 400 — mV RDS(ON)1 High-Side Power MOSFET On-Resistance (Note 8) — — 45 — mΩ RDS(ON)2 Low-Side Power MOSFET On-Resistance (Note 8) — — 20 — mΩ IPEAK_LIMIT HS Peak Current Limit (Note 8) — 6.8 8 9.2 A IVALLEY_LIMIT LS Valley Current Limit (Note 8) — — 9 — A IPFMPK PFM Peak Current Limit — — 950 — mA IZC Zero Cross Current Threshold — — 0 — mA fSW Oscillator Frequency — 510 570 630 kHz tON_MIN Minimum On-Time — — 100 — ns VFB Feedback Voltage CCM 792 800 808 mV VEN_H EN Logic High Threshold — — 1.18 1.25 V VEN_L EN Logic Low Threshold — 1.03 1.09 — V VEN = 1.5V — 5.5 — μA IEN EN Input Current VEN = 1V 1 1.5 2 μA tSS Soft-Start Time CSS = 10nF — 4 — ms TSD Thermal Shutdown (Note 8) — — 160 — °C THys Thermal Shutdown Hysteresis (Note 8) — — 25 — °C Note: 8. Compliance to the datasheet limits is assured by one or more methods: production test, characterization, and/or design. 3 of 5 AP64501 Databrief October 2019
www.diodes.com
© Diodes Incorporated