Datasheet VSMY5890X01 (Vishay) - 2
| Hersteller | Vishay |
| Beschreibung | High Speed Infrared Emitting Diodes, 890 nm, Surface Emitter Technology |
| Seiten / Seite | 6 / 2 — VSMY5890X01. ABSOLUTE MAXIMUM RATINGS. PARAMETER. TEST CONDITION. SYMBOL. … |
| Dateiformat / Größe | PDF / 128 Kb |
| Dokumentensprache | Englisch |
VSMY5890X01. ABSOLUTE MAXIMUM RATINGS. PARAMETER. TEST CONDITION. SYMBOL. VALUE. UNIT. BASIC CHARACTERISTICS. MIN. TYP. MAX
Modelllinie für dieses Datenblatt
Textversion des Dokuments
VSMY5890X01
www.vishay.com Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR 5 V Forward current IF 100 mA Peak forward current tp/T = 0.1, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 500 mA Power dissipation PV 210 mW Junction temperature Tj 125 °C Operating temperature range Tamb -40 to +110 °C Storage temperature range Tstg -40 to +110 °C Soldering temperature According to Fig. 7, J-STD-020 Tsd 260 °C Thermal resistance junction-to-ambient EIA / JESD51 RthJA 280 K/W Axis Title Axis Title 220 10000 110 10000 200 100 ) 180 R = 280 K/W thJA 90 R = 280 K/W thJA W ) 160 A (m 80 (m n 1000 1000 o 140 70 pati 120 ne ne rrent ne ine 60 u ne ine issi 100 1st li 50 2nd li 2nd l rd C 1st li 2nd li 2nd l a er D 80 40 100 100 ow orw P 60 F 30 - - V I F 40 P 20 20 10 0 10 0 10 0 20 40 60 80 100 120 0 20 40 60 80 100 120 T - Ambient Temperature (°C) T - Ambient Temperature (°C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF - 1.8 2.1 V Temperature coefficient of VF IF = 100 mA, tp = 20 ms TKVF - -1.6 - mV/K Reverse current IR Not designed for reverse operation μA V Junction capacitance R = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ - 30 - pF Radiant intensity IF = 100 mA, tp = 20 ms Ie 10 13 18 mW/sr Temperature coefficient of radiant I power F = 100 mA, tp = 20 ms TKφe - -0.2 - %/K Angle of half intensity ϕ - ± 60 - ° Peak wavelength IF = 100 mA, tp = 20 ms λp - 890 - nm Spectral bandwidth IF = 100 mA, tp = 20 ms Δλ - 40 - nm Temperature coefficient of λp IF = 100 mA, tp = 20 ms TKλp - 0.25 - nm/K Rise time IF = 100 mA, 10 % to 90 % tr - 8 - ns Fall time IF = 100 mA, 10 % to 90 % tf - 8 - ns Rev. 1.0, 11-Apr-2019
2
Document Number: 84952 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR 5 V Forward current IF 100 mA Peak forward current tp/T = 0.1, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 500 mA Power dissipation PV 210 mW Junction temperature Tj 125 °C Operating temperature range Tamb -40 to +110 °C Storage temperature range Tstg -40 to +110 °C Soldering temperature According to Fig. 7, J-STD-020 Tsd 260 °C Thermal resistance junction-to-ambient EIA / JESD51 RthJA 280 K/W Axis Title Axis Title 220 10000 110 10000 200 100 ) 180 R = 280 K/W thJA 90 R = 280 K/W thJA W ) 160 A (m 80 (m n 1000 1000 o 140 70 pati 120 ne ne rrent ne ine 60 u ne ine issi 100 1st li 50 2nd li 2nd l rd C 1st li 2nd li 2nd l a er D 80 40 100 100 ow orw P 60 F 30 - - V I F 40 P 20 20 10 0 10 0 10 0 20 40 60 80 100 120 0 20 40 60 80 100 120 T - Ambient Temperature (°C) T - Ambient Temperature (°C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF - 1.8 2.1 V Temperature coefficient of VF IF = 100 mA, tp = 20 ms TKVF - -1.6 - mV/K Reverse current IR Not designed for reverse operation μA V Junction capacitance R = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ - 30 - pF Radiant intensity IF = 100 mA, tp = 20 ms Ie 10 13 18 mW/sr Temperature coefficient of radiant I power F = 100 mA, tp = 20 ms TKφe - -0.2 - %/K Angle of half intensity ϕ - ± 60 - ° Peak wavelength IF = 100 mA, tp = 20 ms λp - 890 - nm Spectral bandwidth IF = 100 mA, tp = 20 ms Δλ - 40 - nm Temperature coefficient of λp IF = 100 mA, tp = 20 ms TKλp - 0.25 - nm/K Rise time IF = 100 mA, 10 % to 90 % tr - 8 - ns Fall time IF = 100 mA, 10 % to 90 % tf - 8 - ns Rev. 1.0, 11-Apr-2019
2
Document Number: 84952 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000