Datasheet BC856, BC857, BC858, BC859, BC860 (ON Semiconductor) - 2

BC856-BC860 tm PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits 3 • Low Noise: BC859, BC860
• Complement to BC846 . BC850
2
1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings*
Symbol
VCBO VCEO Ta = 25°C unless otherwise noted Parameter Value Units : BC856
: BC857/860
: BC858/859 -80
-50
-30 V
V
V : BC856
: BC857/860
: BC858/859 -65
-45
-30 V
V
V Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 310 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. ICBO Collector Cut-off Current VCB= -30V, IE=0 hFE DC Current Gain VCE= -5V, IC= -2mA VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA -90
-250 VBE (sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA -700
-900 VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -2mA
VCE= -5V, IC= -10mA fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA
f=100MHz Cob Output Capacitance VCB= -10V, IE=0, f=1MHz NF Noise Figure
: BC856/857/858
: BC859/860 VCE= -5V, IC= -200µA
RG=2KΩ, f=1KHz : BC859
: BC860 VCE= -5V, IC= -200µA
RG=2KΩ, f=30~15000Hz 110 -600 Max. Units -15 nA 800 -660 -300
-650 mV
mV
mV
mV -750
-800 150 mV
mV
MHz 6 pF 2
1 10
4 dB
dB 1.2
1.2 4
2 dB
dB * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation BC856-BC860 Rev. B 1 www.fairchildsemi.com BC856-BC860 PNP Epitaxial Silicon Transistor August 2006