Datasheet BC846, BC847, BC848, BC850 (ON Semiconductor) - 4

BC846 / BC847 / BC848 / BC850 — Typical Performance Characteristics 100 1000
I = 400μA V = 5V CE B T = 150 oC I = 350μA A
80
B IN I = 300μA A B G T = 25 oC I = 250μA T A N
60
B R CURRENT O I = 200μA B
100
CURRE T = -55 oC A
40
I = 150μA B , COLLECT , DC I = 100μA A] B h FE [m
20
I C I = 50μA B
0 10 0.1 1 10 100 1000 NPN 0 4 8 12 16 20
I [mA], COLLECTOR CURRENT V [V], COLLECTOR-EMITTER VOLTAGE C CE
Epit Figure 1. Static Characteristic Figure 2. DC Current Gain axia 1 10 l Silicon T
I = 10I I = 20I C B C B R R E E T T E IT M MIT AG E AGE -E T
1
R- LT R O O VO CT VOL
r
CT N
0.1 ansistor
E L ON LLE IO T = 150oC A ATI AT R COL R ], ], CO U
0.1
T = 25oC V T = 150oC [V A [ A ) SATU T SAT T = -55oC A A (S T = 25oC (SAT T = -55oC A E CE A C V V
0.01 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000
I [mA], COLLECTOR CURRENT I [mA], COLLECTOR CURRENT C C
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage
E AGE AG
1.2
T
1.2
LT I = 10I I = 20I C B C B VO VOL N ON
1.0 1.0
IO ATI AT R R U
0.8
T = -55oC
0.8
A SATU T = -55oC SAT A ER TER T T = 25oC T T = 25oC
0.6
IT A
0.6
A EMI
0.4 0.4
T = 150oC , BASE-EM T = 150oC A , BASE- A [V] [V] ) AT
0.2
S
0.2
(SAT
0.1 1 10 100 1000
BE(
0.1 1 10 100 1000
BE V V I [mA], COLLECTOR CURRENT I [mA], COLLECTOR CURRENT C C
Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter Saturation Voltage
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