Datasheet BCV61 (Nexperia) - 3

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NXP Semiconductors BCV61 NPN general-purpose double transistors 3. Ordering information Table 3. Ordering information Type number Package Name Description Version
BCV61 - plastic surface-mounted package; 4 leads SOT143B BCV61A BCV61B BCV61C
4. Marking Table 4. Marking codes Type number Marking code[1]
BCV61 1M* BCV61A 1J* BCV61B 1K* BCV61C 1L* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
5. Limiting values Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit Per transistor
VCBO collector-base voltage open emitter - 30 V VCEO collector-emitter voltage open base - 30 V VEBS emitter-base voltage VCE = 0 V - 6 V IC collector current - 100 mA ICM peak collector current - 200 mA IBM peak base current - 200 mA
Per device
P ≤ tot total power dissipation Tamb 25 °C [1] - 250 mW Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB). BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 2 of 13
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents