Datasheet IGLD60R190D1 (Infineon) - 7

HerstellerInfineon
Beschreibung600V CoolGaN™ enhancement-mode Power Transistor
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Revision02_00
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IGL. D60R190D1. 600V CoolGaN™ enhancement-mode Power Transistor. Electrical characteristics diagrams. Figure 1. Power dissipation

IGL D60R190D1 600V CoolGaN™ enhancement-mode Power Transistor Electrical characteristics diagrams Figure 1 Power dissipation

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IGL D60R190D1 600V CoolGaN™ enhancement-mode Power Transistor 4 Electrical characteristics diagrams
at Tj = 25 °C, unless specified otherwise
Figure 1 Power dissipation Figure 2 Max. transient thermal impedance 70 10 60 50 1 40 ] ] [W tot 30 [K/W P C J
D=
htZ 0.1
0.5 0.2
20
0.1 0.05 0.02 0.01
10
single pulse
0 0.01 0 20 40 60 80 100 120 140 160 1E-6 1E-4 1E-2 1E+0 1E+2 T [oC] t [s] C p
Ptot=f(Tc) ZthJC=f(tp, D)
Figure 3 Safe operating area Figure 4 Safe operating area 100 100 tp = 20 ns tp = 100 μs 10 10 DC tp = 10 μs tp = 20 ns tp = 1 ms tp = 100 μs tp = 1 ms tp = 10 μs Limited by Limited by ] R (on) DS ] DC R (on) DS 1 [A 1 [A I D I D 0.1 0.1 0.01 0.01 1 10 100 1000 1 10 100 1000 V [V] V [V] DS DS
ID=f(VDS); TC = 25 °C ID=f(VDS); TC = 125 °C Final Data Sheet 7 Rev. 2.0 2018-11-09 Document Outline Features Benefits Applications Table of Contents 1 Maximum ratings 2 Thermal characteristics 3 Electrical characteristics 4 Electrical characteristics diagrams 5 Test Circuits 6 Package Outlines 7 Appendix A 8 Revision History