AOTL66610TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 10000 V =30V DS I =20A D C 8 8000 iss pF)s) 6 (t 6000 eol Vnc(atiGS 4 c 4000 Vpa C a oss C 2 2000 Crss 0 0 0 20 40 60 80 100 120 0 10 20 30 40 50 60 Q (nC)V (Volts)gDSFigure 7: Gate-Charge CharacteristicsFigure 8: Capacitance Characteristics 10000.0 1000 T =175°C J(Max) T =25°C C 1000.0 10ms 800 10ms RDS(ON) limited 100.0 100ms ) 600 W(ps) 1ms rme 10.0 A( 10ms ow 400 I D DC P 1.0 T =175°C J(Max) T =25°C 200 C 0.1 0 0.0 0.0001 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 Pulse Width (s)V (Volts)DSFigure 10: Single Pulse Power Rating Junction-to-V> or equal to 6VGSCase (Note F)Figure 9: Maximum Forward BiasedSafe Operating Area (Note F) 10 D=T /T on In descending order t n T =T +P .Z .R D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse J,PK C DM qJC qJC eise R =0.55°C/W nc qJC anrat 1 T sidseezil R l mar mar 0.1 P oe Single Pulse DM N hTJC q Z Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: February 2019 www.aosmd.com Page 4 of 6