Datasheet AOTL66608 (Alpha & Omega) - 2

AOTL66608 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 60 V VDS=60V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current μA TJ=55°C 5 I Gate-Body leakage current V GSS DS=0V, VGS=±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.1 2.65 3.3 V VGS=10V, ID=20A 0.7 0.85 mΩ RDS(ON) Static Drain-Source On-Resistance TJ=125°C 1.03 1.25 VGS=6V, ID=20A 0.85 1.1 mΩ g Forward Transconductance V FS DS=5V, ID=20A 100 S V I SD Diode Forward Voltage S=1A, VGS=0V 0.65 1 V IS Maximum Body-Diode Continuous Current 350 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 14200 pF C Output Capacitance V oss GS=0V, VDS=30V, f=1MHz 4300 pF Crss Reverse Transfer Capacitance 155 pF Rg Gate resistance f=1MHz 1.1 2.2 3.3 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 205 300 nC Q V gs Gate Source Charge GS=10V, VDS=30V, ID=20A 50 nC Qgd Gate Drain Charge 50 nC Qoss Output Charge VGS=0V, VDS=30V 262 nC tD(on) Turn-On DelayTime 33 ns tr Turn-On Rise Time VGS=10V, VDS=30V, RL=1.5W, 36 ns t R D(off) Turn-Off DelayTime GEN=3W 140 ns tf Turn-Off Fall Time 65 ns trr Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms 50 ns Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 265 nC A. The value of Rq is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The JA A Power dissipation P is based on R t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application DSM qJA depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P is based on T =175°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T =175°C. J(MAX) D. The Rq is the sum of the thermal impedance from junction to case R and case to ambient. JA qJC E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175°C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. A APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: February 2019
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