Datasheet BAT54, BAT54A, BAT54C, BAT54S (Diodes) - 2
| Hersteller | Diodes |
| Beschreibung | Surface Mount Schottky Barrier Diode |
| Seiten / Seite | 5 / 2 — BAT54 /A /C /S. Maximum Ratings. Characteristic. Symbol. Value. Unit. … |
| Dateiformat / Größe | PDF / 256 Kb |
| Dokumentensprache | Englisch |
BAT54 /A /C /S. Maximum Ratings. Characteristic. Symbol. Value. Unit. Thermal Characteristics. Electrical Characteristics. Min. Typ. Max
Modelllinie für dieses Datenblatt
- BAT54-7-F BAT54BRW-7-F BAT54DW-7-F BAT54JW-7-F BAT54LP-7 BAT54LP-7B BAT54LPS-7 BAT54Q-7-F BAT54S-7-F BAT54SDW-7-F BAT54SDWQ-7-F BAT54SQ-13 BAT54SQ-7-F BAT54ST-7-F BAT54STA BAT54STQ-7-F BAT54SW-7-F BAT54SWQ-7-F BAT54T-7 BAT54T-7-F BAT54TA BAT54TQ-7-F BAT54TW-7-F BAT54TWQ-7-F BAT54V-7 BAT54W-7-01-F BAT54W-7-F BAT54WQ-7-F BAT54WS-7-F BAT54WSQ-7-F BAT54WT-7
Textversion des Dokuments
BAT54 /A /C /S Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 30 V DC Blocking Voltage VR Average Rectified Output Current (Note 5) IO 200 mA Repetitive Peak Forward Current IFRM 300 mA Forward Surge Current @ t < 1.0s IFSM 600 mA
Thermal Characteristics Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 200 mW Typical Thermal Resistance Junction to Ambient Air (Note 5) RθJA 500 °C/W Typical Thermal Resistance Junction to Case (Note 8) RθJC 180 °C/W Operating and Storage Temperature Range (Note 6) TJ, TSTG -65 to +150 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 7) V(BR)R 30 V IRS = 100µA 240 IF = 0.1mA 320 IF = 1mA Forward Voltage VF 400 mV IF = 10mA 500 IF = 30mA 800 IF = 100mA Reverse Leakage Current (Note 7) IR 2.0 µA VR = 25V Total Capacitance CT 10 pF VR = 1.0V, f = 1.0MHz I Reverse Recovery Time t F = 10mA through IR = 10mA to RR 5.0 ns IR = 1.0mA, RL = 100Ω Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html. 6. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RθJA. 7. Short duration test pulse used to minimize self-heating effect. 8. Device mounted on Polymide substrate PC board. FR-4 2oz 1*MRP layout. BAT54 /A /C /S 2 of 5 November 2016 Document number: DS11005 Rev. 32 - 2
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© Diodes Incorporated
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 30 V DC Blocking Voltage VR Average Rectified Output Current (Note 5) IO 200 mA Repetitive Peak Forward Current IFRM 300 mA Forward Surge Current @ t < 1.0s IFSM 600 mA
Thermal Characteristics Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 200 mW Typical Thermal Resistance Junction to Ambient Air (Note 5) RθJA 500 °C/W Typical Thermal Resistance Junction to Case (Note 8) RθJC 180 °C/W Operating and Storage Temperature Range (Note 6) TJ, TSTG -65 to +150 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 7) V(BR)R 30 V IRS = 100µA 240 IF = 0.1mA 320 IF = 1mA Forward Voltage VF 400 mV IF = 10mA 500 IF = 30mA 800 IF = 100mA Reverse Leakage Current (Note 7) IR 2.0 µA VR = 25V Total Capacitance CT 10 pF VR = 1.0V, f = 1.0MHz I Reverse Recovery Time t F = 10mA through IR = 10mA to RR 5.0 ns IR = 1.0mA, RL = 100Ω Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html. 6. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RθJA. 7. Short duration test pulse used to minimize self-heating effect. 8. Device mounted on Polymide substrate PC board. FR-4 2oz 1*MRP layout. BAT54 /A /C /S 2 of 5 November 2016 Document number: DS11005 Rev. 32 - 2
www.diodes.com
© Diodes Incorporated