Datasheet SPD50P03L G (Infineon) - 4
| Hersteller | Infineon |
| Beschreibung | OptiMOS -P Power-Transistor |
| Seiten / Seite | 9 / 4 — SPD50P03L G. 1 Power dissipation. 2 Drain current. 160. 140. 120. 100. … |
| Revision | 01_09 |
| Dateiformat / Größe | PDF / 395 Kb |
| Dokumentensprache | Englisch |
SPD50P03L G. 1 Power dissipation. 2 Drain current. 160. 140. 120. 100. [W]. [A]. tot. 200. C [°C]. 3 Safe operating area
Modelllinie für dieses Datenblatt
Textversion des Dokuments
SPD50P03L G 1 Power dissipation 2 Drain current
P tot=f(T C) I D=f(T C); |V GS|≥10 V
160 55 50 140 45 120 40 100 35 30 [W] 80 [A] tot D P -I 25 60 20 15 40 10 20 5 0 0 0 40 80 120 160 200 0 40 80 120 160 200 T C [°C] T C [°C] 3 Safe operating area 4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T
103 101
limited by on-state resistance 1 µs 10 µs
102
10 ms
100
100 µs
]
DC
[A
1 ms
[K/W] D-I C thJZ
0.5
101 10-1
0.2 0.1 0.05 0.02 0.01 single pulse
100 10-2 10-1 100 101 102 10-1 10-2 10-3 10-4 10-5 -V DS [V] t p [s]
Rev. 1.9 page 4 2012-09-13 Document Outline Untitled
P tot=f(T C) I D=f(T C); |V GS|≥10 V
160 55 50 140 45 120 40 100 35 30 [W] 80 [A] tot D P -I 25 60 20 15 40 10 20 5 0 0 0 40 80 120 160 200 0 40 80 120 160 200 T C [°C] T C [°C] 3 Safe operating area 4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T
103 101
limited by on-state resistance 1 µs 10 µs
102
10 ms
100
100 µs
]
DC
[A
1 ms
[K/W] D-I C thJZ
0.5
101 10-1
0.2 0.1 0.05 0.02 0.01 single pulse
100 10-2 10-1 100 101 102 10-1 10-2 10-3 10-4 10-5 -V DS [V] t p [s]
Rev. 1.9 page 4 2012-09-13 Document Outline Untitled