Datasheet TB67S111PG (Toshiba) - 9
| Hersteller | Toshiba |
| Beschreibung | BiCD Integrated Circuit Silicon Monolithic |
| Seiten / Seite | 15 / 9 — Cautions on over current detection (ISD) and thermal shutdown detection … |
| Dateiformat / Größe | PDF / 315 Kb |
| Dokumentensprache | Englisch |
Cautions on over current detection (ISD) and thermal shutdown detection (TSD). Back-EMF. IC mounting
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TB67S111PG
Cautions on over current detection (ISD) and thermal shutdown detection (TSD)
The ISD and TSD circuits are only intended to provide temporary protection against irregular conditions such as an output short-circuits; they do not necessarily guarantee the complete IC safety. If the device is used beyond the specified operating ranges, these circuits may not operate properly: then the device may be damaged due to an output short-circuit. The ISD circuit is only intended to provide a temporary protection against an output short-circuit. If such condition persists for a long time, the device may be damaged due to overstress. Overcurrent conditions must be removed immediately by external hardware.
Back-EMF
While a motor is rotating, there is a timing at which power is fed back to the power supply. At that timing, the motor current recirculates back to the power supply due to the effect of the motor back-EMF. If the power supply does not have enough sink capability, the power supply and output pins of the device might rise above the rated voltages. The magnitude of the motor back-EMF varies with usage conditions and motor characteristics. It must be fully verified that there is no risk that the device or other components will be damaged or fail due to the motor back-EMF.
IC mounting
Do not insert devices incorrectly or in the wrong orientation. Otherwise, it may cause breakdown, damage and/or deterioration of the device.
AC Electrical Characteristics (Ta=25°C and VM=24 V, unless otherwise specified.)
Characteristics Symbol Test condition Min Typ. Max Unit Minimum pulse width of logic tIN(twp) (Design value) 1.0 ― ― μs input tIN(twn) (Design value) 1.0 ― ― μs Output MOSFET switching tr ― 0.05 0.10 0.15 μs characteristics tf ― 0.05 0.10 0.15 μs Output MOSFET response tpLH(IN) Between IN and OUT 0.20 0.70 1.20 μs characteristics tpHL(IN) Between IN and OUT 0.20 0.70 1.20 μs OSCS frequency fOSCS ― 5120 6400 7680 kHz Over current detection (ISD) tISD(mask) fOSCS(=6.4 MHz)×8 clk 1.0 1.25 1.5 μs masking time Of time after over current ― ― 260 320 390 μs detection (ISD) Thermal shutdown detection tTSD(mask) fOSCS(=6.4 MHz)×32 clk 4.0 5.0 6.0 μs (TSD) masking time Of time after thermal shutdown ― ― 260 320 390 μs detection (TSD) 9 2017-08-04
Cautions on over current detection (ISD) and thermal shutdown detection (TSD)
The ISD and TSD circuits are only intended to provide temporary protection against irregular conditions such as an output short-circuits; they do not necessarily guarantee the complete IC safety. If the device is used beyond the specified operating ranges, these circuits may not operate properly: then the device may be damaged due to an output short-circuit. The ISD circuit is only intended to provide a temporary protection against an output short-circuit. If such condition persists for a long time, the device may be damaged due to overstress. Overcurrent conditions must be removed immediately by external hardware.
Back-EMF
While a motor is rotating, there is a timing at which power is fed back to the power supply. At that timing, the motor current recirculates back to the power supply due to the effect of the motor back-EMF. If the power supply does not have enough sink capability, the power supply and output pins of the device might rise above the rated voltages. The magnitude of the motor back-EMF varies with usage conditions and motor characteristics. It must be fully verified that there is no risk that the device or other components will be damaged or fail due to the motor back-EMF.
IC mounting
Do not insert devices incorrectly or in the wrong orientation. Otherwise, it may cause breakdown, damage and/or deterioration of the device.
AC Electrical Characteristics (Ta=25°C and VM=24 V, unless otherwise specified.)
Characteristics Symbol Test condition Min Typ. Max Unit Minimum pulse width of logic tIN(twp) (Design value) 1.0 ― ― μs input tIN(twn) (Design value) 1.0 ― ― μs Output MOSFET switching tr ― 0.05 0.10 0.15 μs characteristics tf ― 0.05 0.10 0.15 μs Output MOSFET response tpLH(IN) Between IN and OUT 0.20 0.70 1.20 μs characteristics tpHL(IN) Between IN and OUT 0.20 0.70 1.20 μs OSCS frequency fOSCS ― 5120 6400 7680 kHz Over current detection (ISD) tISD(mask) fOSCS(=6.4 MHz)×8 clk 1.0 1.25 1.5 μs masking time Of time after over current ― ― 260 320 390 μs detection (ISD) Thermal shutdown detection tTSD(mask) fOSCS(=6.4 MHz)×32 clk 4.0 5.0 6.0 μs (TSD) masking time Of time after thermal shutdown ― ― 260 320 390 μs detection (TSD) 9 2017-08-04