Datasheet Si2312CDS (Vishay) - 5

HerstellerVishay
BeschreibungN-Channel 20 V (D-S) MOSFET
Seiten / Seite10 / 5 — Si2312CDS. TYPICAL CHARACTERISTICS. Current Derating a. Power Derating, …
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Si2312CDS. TYPICAL CHARACTERISTICS. Current Derating a. Power Derating, Junction-to-Foot. Power Derating, Junction-to-Ambient

Si2312CDS TYPICAL CHARACTERISTICS Current Derating a Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient

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Si2312CDS
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 7.5 6.0 (A) Package Limited 4.5 Current rain 3.0 D - I D 1.5 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C)
Current Derating a
2.5 1.2 2.0 0.9 1.5 (W) (W) 0.6 Power 1.0 Power 0.3 0.5 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S10-0641-Rev. A, 22-Mar-10
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Document Number: 65900 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000