Datasheet BSC034N06NS (Infineon) - 7
| Hersteller | Infineon |
| Beschreibung | OptiMOS Power-Transistor |
| Seiten / Seite | 10 / 7 — BSC034N06NS. 13 Avalanche characteristics. 14 Typ. gate charge. 100. ] … |
| Revision | 02_00 |
| Dateiformat / Größe | PDF / 501 Kb |
| Dokumentensprache | Englisch |
BSC034N06NS. 13 Avalanche characteristics. 14 Typ. gate charge. 100. ] A[. [V]. GSV. 0.1. 1000. [µs]. [nC]. gate
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Textversion des Dokuments
BSC034N06NS 13 Avalanche characteristics 14 Typ. gate charge
I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=50 A pulsed parameter: T j(start) parameter: V DD
100 12
30 V
10
12 V 48 V 25 °C 125 °C 100 °C
10 8 ] A[ [V] 6 I AV GSV 1 4 2 0.1 0 1 10 100 1000 0 10 20 30 40 t [µs] AV Q [nC] gate 15 Drain-source breakdown voltage 16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70 V
GS Q g
66 62 [V] )S DS( BRV 58
V gs(th)
54
Q g(th) Q sw
Q gate
Q Q
50
gs gd
-60 -20 20 60 100 140 180 T [°C] j
Rev.2.0 page 7 2013-10-17
I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=50 A pulsed parameter: T j(start) parameter: V DD
100 12
30 V
10
12 V 48 V 25 °C 125 °C 100 °C
10 8 ] A[ [V] 6 I AV GSV 1 4 2 0.1 0 1 10 100 1000 0 10 20 30 40 t [µs] AV Q [nC] gate 15 Drain-source breakdown voltage 16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70 V
GS Q g
66 62 [V] )S DS( BRV 58
V gs(th)
54
Q g(th) Q sw
Q gate
Q Q
50
gs gd
-60 -20 20 60 100 140 180 T [°C] j
Rev.2.0 page 7 2013-10-17