Datasheet SEP8706 (Honeywell) - 2
| Hersteller | Honeywell |
| Beschreibung | AlGaAs Infrared Emitting Diode |
| Seiten / Seite | 4 / 2 — SEP8706 AlGaAs Infrared Emitting Diode. ELECTRICAL CHARACTERISTICS. … |
| Dateiformat / Größe | PDF / 430 Kb |
| Dokumentensprache | Englisch |
SEP8706 AlGaAs Infrared Emitting Diode. ELECTRICAL CHARACTERISTICS. PARAMETER. SYMBOL. MIN. TYP. MAX. UNITS. TEST CONDITIONS
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SEP8706 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC
(25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current 50 mA Power Dissipation 100 mW [À] Operating Temperature Range -40¡C to 85¡C Storage Temperature Range -40¡C to 85¡C Soldering Temperature (5 sec) 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C. Honeywell reserves the right to make changes in order to improve design and h 53 supply the best products possible.
(25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current 50 mA Power Dissipation 100 mW [À] Operating Temperature Range -40¡C to 85¡C Storage Temperature Range -40¡C to 85¡C Soldering Temperature (5 sec) 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C. Honeywell reserves the right to make changes in order to improve design and h 53 supply the best products possible.