Datasheet 2N4033 (STMicroelectronics) - 2

2N4033 THERMAL DATA
R o thj-case Thermal Resistance Junction-Case Max 37.5 C/W R o thj-amb Thermal Resistance Junction-Ambient Max 187.5 C/W
ELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off VCE = -60 V -50 nA Current (IE = 0) VCE = -60 V TC = 150 oC -50 µA V(BR)CBO Collector-Base IC = -10 µA -80 V Breakdown Voltage (IE = 0) V(BR)CEO∗ Collector-Emitter IC = -10 mA -80 V Breakdown Voltage (IB = 0) V(BR)EBO Emitter-Base IE = -10 µA -5 V Breakdown Voltage (IC = 0) VCE(sat)∗ Collector-Emitter IC = -150 mA IB = -15 mA -0.15 V Saturation Voltage IC = -500 mA IB = -50 mA -0.5 V VBE(sat)∗ Base-Emitter IC = -150 mA IB = -15 mA -0.9 V Saturation Voltage IC = -500 mA IB = -50 mA -1.1 V hFE∗ DC Current Gain IC = -100 µA VCE = -5 V 75 IC = -100 mA VCE = -5 V 100 300 IC = -500 mA VCE = -5 V 70 IC = -1 A VCE = -5 V 25 IC = -100 mA VCE = -5 V Tamb = -55 oC 40 fT Transition Frequency IC = -50 mA VCE = -10 V 150 500 MHz f = 100 MHz CEBO Emitter-Base IE = 0 VEB = -0.5 V f = 1MHz 110 pF Capacitance CCBO Collector-Base IC = 0 VCB = -10 V f = 1MHz 20 pF Capacitance ts∗∗ Storage Time IC = -500 mA VCC = -30 V 350 ns IB1 = -IB2 = -50 mA tf∗∗ Fall Time IC = -500 mA VCC = -30 V 50 ns IB1 = -IB2 = -50 mA ton∗∗ Turn-on Time IC = -500 mA VCC = -30 V 100 ns IB1 = -IB2 = -50 mA * Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % ∗∗ See Test Circuit Obsolete Product(s) - Obsolete Product(s) 2/6