Datasheet 2N3019 (STMicroelectronics)
| Hersteller | STMicroelectronics |
| Beschreibung | Silicon Planar Epitaxial NPN transistor |
| Seiten / Seite | 4 / 1 — 2N3019. DESCRIPTION. TO-39. INTERNAL SCHEMATIC DIAGRAM. ABSOLUTE MAXIMUM … |
| Dateiformat / Größe | PDF / 48 Kb |
| Dokumentensprache | Englisch |
2N3019. DESCRIPTION. TO-39. INTERNAL SCHEMATIC DIAGRAM. ABSOLUTE MAXIMUM RATINGS. Symbol. Parameter. Value. Unit
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2N3019
SMALL SIGNAL NPN TRANSISTOR
DESCRIPTION
The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.
TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 140 V VCEO Collector-Emitter Voltage (IB = 0) 80 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 1 A Ptot Total Dissipation at Tamb ≤ 25 oC 0.8 W at TC ≤ 25 oC 5 W Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC September 2002 1/4
2N3019
SMALL SIGNAL NPN TRANSISTOR
DESCRIPTION
The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.
TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 140 V VCEO Collector-Emitter Voltage (IB = 0) 80 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 1 A Ptot Total Dissipation at Tamb ≤ 25 oC 0.8 W at TC ≤ 25 oC 5 W Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC September 2002 1/4