Datasheet SiSS22DN (Vishay)
| Hersteller | Vishay |
| Beschreibung | N-Channel 60 V (D-S) MOSFET |
| Seiten / Seite | 7 / 1 — SiSS22DN. N-Channel 60 V (D-S) MOSFET. FEATURES. PowerPAK® 1212-8S. … |
| Dateiformat / Größe | PDF / 199 Kb |
| Dokumentensprache | Englisch |
SiSS22DN. N-Channel 60 V (D-S) MOSFET. FEATURES. PowerPAK® 1212-8S. APPLICATIONS. PRODUCT SUMMARY. ORDERING INFORMATION
Modelllinie für dieses Datenblatt
Textversion des Dokuments
SiSS22DN
www.vishay.com Vishay Siliconix
N-Channel 60 V (D-S) MOSFET FEATURES PowerPAK® 1212-8S
D D • TrenchFET® Gen IV power MOSFET 8 D 7 D 6 • Very low RDS - Qg figure-of-merit (FOM) 5 • Tuned for the lowest RDS - Qoss FOM • 100 % Rg and UIS tested • Material categorization: for definitions of compliance 3.3 mm 3.3 1 2 please see www.vishay.com/doc?99912 mm S 3 S 1 mm 4 S 3.3 mm 3.3
APPLICATIONS
D G Top View Bottom View • Synchronous rectification
PRODUCT SUMMARY
• Primary side switch VDS (V) 60 • DC/DC converter G RDS(on) max. () at VGS = 10 V 0.004 • Solar micro inverter RDS(on) max. () at VGS = 7.5 V 0.005 • Motor drive switch Qg typ. (nC) 22.5 • Battery and load switch S ID (A) 90.6 N-Channel MOSFET Configuration Single • Industrial
ORDERING INFORMATION
Package PowerPAK 1212-8S Lead (Pb)-free and halogen-free SiSS22DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 60 V Gate-source voltage VGS ± 20 TC = 25 °C 90.6 TC = 70 °C 72.5 Continuous drain current (TJ = 150 °C) ID TA = 25 °C 25 b, c TA = 70 °C 20 b, c A Pulsed drain current (t = 100 μs) IDM 150 TC = 25 °C 59.7 Continuous source-drain diode current IS TA = 25 °C 4.5 b, c Single pulse avalanche current IAS 25 L = 0.1 mH Single pulse avalanche energy EAS 31.2 mJ TC = 25 °C 65.7 TC = 70 °C 42 Maximum power dissipation PD W TA = 25 °C 5 b, c TA = 70 °C 3.2 b, c Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) c 260
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b t 10 s RthJA 20 25 °C/W Maximum junction-to-case (drain) Steady state RthJC 1.5 1.9
Notes
a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 63 °C/W g. TC = 25 °C S18-0729-Rev. A, 23-Jul-2018
1
Document Number: 77889 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
N-Channel 60 V (D-S) MOSFET FEATURES PowerPAK® 1212-8S
D D • TrenchFET® Gen IV power MOSFET 8 D 7 D 6 • Very low RDS - Qg figure-of-merit (FOM) 5 • Tuned for the lowest RDS - Qoss FOM • 100 % Rg and UIS tested • Material categorization: for definitions of compliance 3.3 mm 3.3 1 2 please see www.vishay.com/doc?99912 mm S 3 S 1 mm 4 S 3.3 mm 3.3
APPLICATIONS
D G Top View Bottom View • Synchronous rectification
PRODUCT SUMMARY
• Primary side switch VDS (V) 60 • DC/DC converter G RDS(on) max. () at VGS = 10 V 0.004 • Solar micro inverter RDS(on) max. () at VGS = 7.5 V 0.005 • Motor drive switch Qg typ. (nC) 22.5 • Battery and load switch S ID (A) 90.6 N-Channel MOSFET Configuration Single • Industrial
ORDERING INFORMATION
Package PowerPAK 1212-8S Lead (Pb)-free and halogen-free SiSS22DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 60 V Gate-source voltage VGS ± 20 TC = 25 °C 90.6 TC = 70 °C 72.5 Continuous drain current (TJ = 150 °C) ID TA = 25 °C 25 b, c TA = 70 °C 20 b, c A Pulsed drain current (t = 100 μs) IDM 150 TC = 25 °C 59.7 Continuous source-drain diode current IS TA = 25 °C 4.5 b, c Single pulse avalanche current IAS 25 L = 0.1 mH Single pulse avalanche energy EAS 31.2 mJ TC = 25 °C 65.7 TC = 70 °C 42 Maximum power dissipation PD W TA = 25 °C 5 b, c TA = 70 °C 3.2 b, c Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) c 260
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b t 10 s RthJA 20 25 °C/W Maximum junction-to-case (drain) Steady state RthJC 1.5 1.9
Notes
a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 63 °C/W g. TC = 25 °C S18-0729-Rev. A, 23-Jul-2018
1
Document Number: 77889 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000