Datasheet BC847BPN (Nexperia) - 2

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Nexperia BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor 3. Ordering information Table 3. Ordering information Type number Package Name Description Version
BC847BPN SC-88 plastic surface-mounted package; 6 leads SOT363
4. Marking Table 4. Marking codes Type number Marking code[1]
BC847BPN 13* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
5. Limiting values Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit Per transistor; for the PNP transistor with negative polarity
VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 45 V VEBO emitter-base voltage open collector - 5 V IC collector current - 100 mA ICM peak collector current single pulse; - 200 mA tp ≤ 1 ms IBM peak base current single pulse; - 200 mA tp ≤ 1 ms Ptot total power dissipation Tamb ≤ 25 °C [1] - 220 mW [2] - 250 mW
Per device
Ptot total power dissipation Tamb ≤ 25 °C [1] - 300 mW [2] - 400 mW Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. BC847BPN_4 © NNexperia B.V. 2017. All rights reserved
Product data sheet Rev. 04 — 18 February 2009 2 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Package outline 9. Packing information 10. Soldering 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents