Datasheet BC856BDW1T1G, SBC856BDW1T1G, BC857BDW1T1G, SBC857BDW1T1G, BC858CDW1T1G (ON Semiconductor) - 5

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BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series
1.0 D = 0.5 0.2 0.1 0.1 0.05 THERMAL Z 0.02 qJA(t) = r(t) RqJA P(pk) RqJA = 328°C/W MAX D CURVES APPLY FOR POWER ANCE (NORMALIZED) t PULSE TRAIN SHOWN 0.01 1 0.01 READ TIME AT t1 r(t), TRANSIENT t RESIST T 2 J(pk) − TC = P(pk) RqJC(t) DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.001 0 1.0 10 100 1.0k 10k 100k 1.0M t, TIME (ms)
Figure 13. Thermal Response
-200 The safe operating area curves indicate IC−VCE limits 1 s 3 ms of the transistor that must be observed for reliable operation. -100 Collector load lines for specific circuits must fall below the (mA) T T limits indicated by the applicable curve. -50 A = 25°C J = 25°C The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves OR CURRENT BC558 are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. BC557 T -10 J(pk) may be calculated from the data in Figure 13. At high BC556 case or ambient temperatures, thermal limitations will , COLLECT -5.0 reduce the power that can be handled to values less than the I C BONDING WIRE LIMIT THERMAL LIMIT limitations imposed by the secondary breakdown. SECOND BREAKDOWN LIMIT -2.0 -1.0 -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area www.onsemi.com 5