Datasheet BC856W, BC857W, BC858W, BC859W, BC860W (Infineon) - 5
Hersteller | Infineon |
Beschreibung | PNP Silicon AF Transistors SOT-323 |
Seiten / Seite | 11 / 5 — BC856W...BC860W. Electrical Characteristics. Parameter. Symbol. Values. … |
Dateiformat / Größe | PDF / 187 Kb |
Dokumentensprache | Englisch |
BC856W...BC860W. Electrical Characteristics. Parameter. Symbol. Values. Unit. min. typ. max. AC characteristics
Modelllinie für dieses Datenblatt
Textversion des Dokuments
BC856W...BC860W Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit min. typ. max. AC characteristics
Transition frequency fT - 250 - MHz IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb - 3 5 pF VCB = 10 V, f = 1 MHz Emitter-base capacitance Ceb - 10 15 VEB = 0.5 V, f = 1 MHz Short-circuit input impedance h11e kΩ IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-gr.
A
- 2.7 - hFE-gr.
B
- 4.5 - hFE-gr.
C
- 8.7 - Open-circuit reverse voltage transf.ratio h12e 10-4 IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-gr.
A
- 1.5 - hFE-gr.
B
- 2 - hFE-gr.
C
- 3 - Short-circuit forward current transf.ratio h21e - IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-gr.
A
- 200 - hFE-gr.
B
- 330 - hFE-gr.
C
- 600 - Open-circuit output admittance h22e µS IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-gr.
A
- 18 - hFE-gr.
B
- 30 - hFE-gr.
C
- 60 - Noise figure F - - 10 dB IC = 200 µA, VCE = 5 V, RS = 2 kΩ, BC856W f = 1 kHz, ∆ f = 200 Hz BC857W BC858W Noise figure F IC = 200 µA, VCE = 5 V, RS = 2 kΩ, f = 1 kHz, ∆ f = 200 Hz BC859W - 1 4 BC860W - 1 4 Equivalent noise voltage Vn - - 0.11 µV IC = 200 µA, VCE = 5 V, RS = 2 kΩ, BC860W f = 10 ... 50 Hz 4 Jan-28-2005