BC856...BC860Maximum RatingsParameterSymbol BC856 BC857 BC858 Unit BC860 BC859 Collector-emitter voltage VCEO 65 45 30 V Collector-base voltage VCBO 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitter-base voltage VEBO 5 5 5 DC collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 Peak emitter current IEM 200 Total power dissipation, TS = 71 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) R ≤ thJS 240 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified. ParameterSymbolValuesUnitmin.typ.max.DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 BC856 65 - - BC857/860 45 - - BC858/859 30 - - Collector-base breakdown voltage V(BR)CBO IC = 10 µA, IE = 0 BC856 80 - - BC857/860 50 - - BC858/859 30 - - 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 Jan-28-2005