Datasheet BC856A, BC856B, BC857A, BC857B, BC857C, BC858A, BC858B, BC858c (Diodes) - 4
| Hersteller | Diodes |
| Beschreibung | PNP |
| Seiten / Seite | 7 / 4 — BC856A-BC858C. Electrical Characteristics. Characteristic. Symbol. Min. … |
| Dateiformat / Größe | PDF / 363 Kb |
| Dokumentensprache | Englisch |
BC856A-BC858C. Electrical Characteristics. Characteristic. Symbol. Min. Typ. Max. Unit. Test Condition. www.diodes.com
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BC856A-BC858C Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
BC856 -80 Collector-Base Breakdown Voltage BC857 BVCBO -50 — — V IC = -10µA BC858 -30 BC856 -65 Collector-Emitter Breakdown Voltage BC857 BV -45 — — V I (Note 10) CEO C = -10mA BC858 -30 Emitter-Base Breakdown Voltage BVEBO -5 — — V IE = -1µA -15 nA V Collector Cutoff Current CB = -30V ICBO — — -4 µA VCB = -30V, TJ = +150°C BC856 -15 VCE = -80V Collector Emitter Cutoff Current BC857 ICES — — -15 nA VCE = -50V BC858 -15 VCE = -30V Emitter-Base Cutoff Current IEBO — — -100 nA VEB = -5V BC856A / BC857A / BC858A 200 Small Signal Current Gain BC856B / BC857B / BC858B h 330 — — (Note 10) fe — BC857C / BC858C 600 BC856A / BC857A / BC858A 2.7 Input Impedance (Note 10) BC856B / BC857B / BC858B hie — 4.5 — kΩ BC857C / BC858C 8.7 IC = -2.0mA, VCE = -5V BC856A / BC857A / BC858A 18 f = 1.0kHz Output Admittance BC856B / BC857B / BC858B h 30 — µS (Note 10) oe — BC857C / BC858C 60 BC856A / BC857A / BC858A 1.5x10-4 Reverse Voltage Transfer BC856B / BC857B / BC858B h 2x10-4 — — Ratio (Note 10) re — BC857C / BC858C 3x10-4 BC856A / BC857A / BC858A 125 180 250 DC Current Gain (Note 10) BC856B / BC857B / BC858B hFE 220 290 475 — IC = -2.0mA, VCE = -5V BC857C / BC858C 420 520 800 -75 -300 I Collector-Emitter Saturation Voltage (Note 10) C = - 10mA, IB = -0.5mA VCE(sat) — mV -250 -650 IC = - 100mA, IB = -5.0mA -600 -650 -750 I Base-Emitter Turn-On Voltage (Note 10) C = -2mA, VCE = -5V VBE(on) mV — — -820 IC = -10mA, VCE = -5V -700 — I Base-Emitter Saturation Voltage (Note 10) C = -10mA, IB = -0.5mA VBE(sat) — mV -850 -1100 IC = -100mA, IB = -5mA Output Capacitance Cobo — 3 — pF VCB = -10V, f = 1.0MHz V Transition Frequency f CE = -5V, IC = -10mA, T 100 200 — MHz f = 100MHz VCE = -5V, IC = -200µA Noise Figure NF — 2 10 dB RS = 2kΩ, f = 1kHz ∆f = 200Hz Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. BC856A – BC858C 4 of 7 October 2014 Document Number: DS11207 Rev. 24 - 2
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© Diodes Incorporated
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
BC856 -80 Collector-Base Breakdown Voltage BC857 BVCBO -50 — — V IC = -10µA BC858 -30 BC856 -65 Collector-Emitter Breakdown Voltage BC857 BV -45 — — V I (Note 10) CEO C = -10mA BC858 -30 Emitter-Base Breakdown Voltage BVEBO -5 — — V IE = -1µA -15 nA V Collector Cutoff Current CB = -30V ICBO — — -4 µA VCB = -30V, TJ = +150°C BC856 -15 VCE = -80V Collector Emitter Cutoff Current BC857 ICES — — -15 nA VCE = -50V BC858 -15 VCE = -30V Emitter-Base Cutoff Current IEBO — — -100 nA VEB = -5V BC856A / BC857A / BC858A 200 Small Signal Current Gain BC856B / BC857B / BC858B h 330 — — (Note 10) fe — BC857C / BC858C 600 BC856A / BC857A / BC858A 2.7 Input Impedance (Note 10) BC856B / BC857B / BC858B hie — 4.5 — kΩ BC857C / BC858C 8.7 IC = -2.0mA, VCE = -5V BC856A / BC857A / BC858A 18 f = 1.0kHz Output Admittance BC856B / BC857B / BC858B h 30 — µS (Note 10) oe — BC857C / BC858C 60 BC856A / BC857A / BC858A 1.5x10-4 Reverse Voltage Transfer BC856B / BC857B / BC858B h 2x10-4 — — Ratio (Note 10) re — BC857C / BC858C 3x10-4 BC856A / BC857A / BC858A 125 180 250 DC Current Gain (Note 10) BC856B / BC857B / BC858B hFE 220 290 475 — IC = -2.0mA, VCE = -5V BC857C / BC858C 420 520 800 -75 -300 I Collector-Emitter Saturation Voltage (Note 10) C = - 10mA, IB = -0.5mA VCE(sat) — mV -250 -650 IC = - 100mA, IB = -5.0mA -600 -650 -750 I Base-Emitter Turn-On Voltage (Note 10) C = -2mA, VCE = -5V VBE(on) mV — — -820 IC = -10mA, VCE = -5V -700 — I Base-Emitter Saturation Voltage (Note 10) C = -10mA, IB = -0.5mA VBE(sat) — mV -850 -1100 IC = -100mA, IB = -5mA Output Capacitance Cobo — 3 — pF VCB = -10V, f = 1.0MHz V Transition Frequency f CE = -5V, IC = -10mA, T 100 200 — MHz f = 100MHz VCE = -5V, IC = -200µA Noise Figure NF — 2 10 dB RS = 2kΩ, f = 1kHz ∆f = 200Hz Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. BC856A – BC858C 4 of 7 October 2014 Document Number: DS11207 Rev. 24 - 2
www.diodes.com
© Diodes Incorporated