Datasheet BC846BDW1, BC847BDW1, BC848CDW1 (ON Semiconductor) - 4

BC846BDW1, BC847BDW1, BC848CDW1 TYPICAL CHARACTERISTICS − BC846BDW1
1.20 1000 V V CE = 10 V 1.10 CE = 5 V TA = 25°C AGE T 1.00 0.90 −55°C 0.80 25°C 0.70 (V) 100 0.60 PRODUCT 0.50 150°C , BASE−EMITTER VOL 0.40 on) BE( 0.30 , CURRENT−GAIN − BANDWIDTH V f T 0.20 10 0.0001 0.001 0.01 0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA)
Figure 7. VBE(on) at VCE = 5 V Figure 8. Current − Gain − Bandwidth Product
10 2 T T A = 25°C T- A = 25°C C 1.6 ib I IC = I I C = C = C = 100 mA 10 mA 20 mA 50 mA 1.2 ANCE (pF) OR−EMITTER VOL ACIT C AGE (V) ob 0.8 C, CAP 0.4 , COLLECT CEV 1 0 0.1 1 10 100 0.01 0.1 1 10 100 VR, REVERSE VOLTAGE (V) IB, BASE CURRENT (mA)
Figure 9. Capacitances Figure 10. Collector Saturation Region
−0.2 VCE = 5 V −0.6 −1 °C) −1.4 TURE COEFFICIENT (mV/ qVB, for VBE −1.8 −55°C to 150°C −2.2 , TEMPERA −2.6 q VB −3 0.1 1 10 100 IB, BASE CURRENT (mA)
Figure 11. Base−Emitter Temperature Coefficient www.onsemi.com 4