Datasheet BC846S (NXP) - 4

HerstellerNXP
BeschreibungNPN general purpose double transistor 65 V, 100 mA, SOT363
Seiten / Seite7 / 4 — NXP. Semiconductors. Product. data. sheet. NPN. general. purpose. double. …
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DokumentenspracheEnglisch

NXP. Semiconductors. Product. data. sheet. NPN. general. purpose. double. transistor. BC846S. MGL738. MGL739. 103. 1200. handbook,. halfpage. handbook,

NXP Semiconductors Product data sheet NPN general purpose double transistor BC846S MGL738 MGL739 103 1200 handbook, halfpage handbook,

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NXP Semiconductors Product data sheet NPN general purpose double transistor BC846S MGL738 MGL739 103 1200 handbook, halfpage handbook, halfpage VBE V (mV) CEsat (mV) 1000 (1) 800 (2) 102 (1) (2) 600 (3) (3) 400 10 200 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) IC/IB = 20. VCE = 5 V. (1) Tamb = 150 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 150 °C. Fig.2 Collector-emitter saturation voltage as a Fig.3 Base-emitter voltage as a function of function of collector current; typical values. collector current; typical values. MGL740 400 handbook, full pagewidth hFE (1) 300 200 (2) (3) 100 0 10−1 1 10 102 103 IC (mA) VCE = 5 V. (2) Tamb = 25 °C. (1) Tamb = 150 °C. (3) Tamb = −55 °C. Fig.4 DC current gain as a function of collector current; typical values. 1999 Sep 01 4 Document Outline Features Applications Description Pinning Marking Limiting values Thermal characteristics Characteristics Package outline Data sheet status Disclaimers