Datasheet RH1014M (Analog Devices) - 3
| Hersteller | Analog Devices |
| Beschreibung | Quad Precision Operational Amplifier |
| Seiten / Seite | 6 / 3 — TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation). VS = ±15V, VCM = … |
| Revision | H |
| Dateiformat / Größe | PDF / 564 Kb |
| Dokumentensprache | Englisch |
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation). VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted
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RH1014M
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. 10KRAD (Si) 20KRAD (Si) 50KRAD (Si) 100KRAD (Si) 200KRAD (Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage 450 450 600 750 900 µV 2 600 600 750 900 µV IOS Input Offset Current 10 10 15 20 25 nA 2 10 10 15 20 nA IB Input Bias Current 60 75 100 175 250 nA 2 80 100 125 200 nA Input Voltage Range 1 V 13.5 13.5 13.5 13.5 13.5 1 –15.0 –15.0 –15.0 –15.0 –15.0 V 2 3.5 3.5 3.5 3.5 V 2 0 0 0 0 V CMRR Common-Mode VCM = 13V, – 15V 97 97 94 90 86 dB Rejection Ratio PSRR Power Supply VS = ±10V to ±18V 100 98 94 86 80 dB Rejection Ratio AVOL Large-Signal RL ≥ 10k, VO = ±10V 500 200 100 50 25 V/mV Voltage Gain VOUT Maximum Output RL ≥ 10k ±12.5 ±12.5 ±12.5 ±12.5 ±12.5 V Voltage Swing Output Low, No Load 2 25 30 40 50 mV Output Low, 600Ω to GND 2 10 10 10 10 mV Output Low, ISINK = 1mA 2 0.6 0.8 1.0 1.6 V Output High, No Load 2 4.0 4.0 4.0 4.0 V Output High, 600Ω to GND 2 3.4 3.2 3.0 2.8 V SR Slew Rate RL ≥ 10k 0.13 0.12 0.11 0.07 0.01 V/µs IS Supply Current Per Amplifier 0.55 0.55 0.55 0.55 0.55 mA 2 0.50 0.50 0.50 0.50 mA
Note 1:
Guaranteed by design, characterization, or correlation to other
Note 2:
Specification applies for VS+ = 5V, VS– = 0V, VCM = 0V, tested parameters. VOUT = 1.4V. Rev. H For more information www.analog.com 3 Document Outline Description Burn-In Circuit Absolute Maximum Ratings Package Information Table 1: Electrical characteristics Table 1a: Electrical characteristics Table 2: Electrical Test Requirements Total Dose Bias Circuit Typical Performance Characteristics Revision History
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. 10KRAD (Si) 20KRAD (Si) 50KRAD (Si) 100KRAD (Si) 200KRAD (Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage 450 450 600 750 900 µV 2 600 600 750 900 µV IOS Input Offset Current 10 10 15 20 25 nA 2 10 10 15 20 nA IB Input Bias Current 60 75 100 175 250 nA 2 80 100 125 200 nA Input Voltage Range 1 V 13.5 13.5 13.5 13.5 13.5 1 –15.0 –15.0 –15.0 –15.0 –15.0 V 2 3.5 3.5 3.5 3.5 V 2 0 0 0 0 V CMRR Common-Mode VCM = 13V, – 15V 97 97 94 90 86 dB Rejection Ratio PSRR Power Supply VS = ±10V to ±18V 100 98 94 86 80 dB Rejection Ratio AVOL Large-Signal RL ≥ 10k, VO = ±10V 500 200 100 50 25 V/mV Voltage Gain VOUT Maximum Output RL ≥ 10k ±12.5 ±12.5 ±12.5 ±12.5 ±12.5 V Voltage Swing Output Low, No Load 2 25 30 40 50 mV Output Low, 600Ω to GND 2 10 10 10 10 mV Output Low, ISINK = 1mA 2 0.6 0.8 1.0 1.6 V Output High, No Load 2 4.0 4.0 4.0 4.0 V Output High, 600Ω to GND 2 3.4 3.2 3.0 2.8 V SR Slew Rate RL ≥ 10k 0.13 0.12 0.11 0.07 0.01 V/µs IS Supply Current Per Amplifier 0.55 0.55 0.55 0.55 0.55 mA 2 0.50 0.50 0.50 0.50 mA
Note 1:
Guaranteed by design, characterization, or correlation to other
Note 2:
Specification applies for VS+ = 5V, VS– = 0V, VCM = 0V, tested parameters. VOUT = 1.4V. Rev. H For more information www.analog.com 3 Document Outline Description Burn-In Circuit Absolute Maximum Ratings Package Information Table 1: Electrical characteristics Table 1a: Electrical characteristics Table 2: Electrical Test Requirements Total Dose Bias Circuit Typical Performance Characteristics Revision History