Datasheet RH1013M (Analog Devices) - 2

RH1013M
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) VS = ±15V, VCM = 0V, unless otherwise noted. TA = 25°C SUB- –55°C ≤ TA ≤ 125°C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS
VOS Input Offset Voltage 300 1 550 2,3 µV 2 450 1 750 3 µV VCM = 0.1V 750 2 µV ∆VOS Average Tempco of 1 2.5 µV/°C ∆Temp Offset Voltage ∆VOS Long Term VOS Stability 0.5 µV/Mo ∆Time IOS Input Offset Current 10 1 20 2,3 nA 2 10 1 20 2,3 nA IB Input Bias Current 30 1 45 2,3 nA 2 50 1 120 2,3 nA en Input Noise Voltage 0.1Hz to 10Hz 0.55 µVP-P Input Noise Voltage fO = 10Hz 24 nV/√Hz Density fO = 1000Hz 22 nV/√Hz in Input Noise Current fO = 10Hz 0.07 pA/√Hz Density RIN Input Resistance Differential 1 70 MΩ Common Mode 4 GΩ AVOL Large-Signal Voltage VO = ±10V, RL ≥ 2k 1.2 4 0.25 5,6 V/µV Gain VO = ±10V, RL ≥ 600Ω 0.5 4 V/µV VO = 5mV to 4V, RL = 500Ω 2 1 V/µV Input Voltage Range 1 13.5 V 1 –15.0 V 1,2 3.5 V 1,2 0 V CMRR Common-Mode VCM = 13.5V, –15V 97 1 dB Rejection Ratio VCM = 13V, –14.9V 94 2,3 dB PSRR Power Supply Rejection VS = ±2V to ±18V 100 1 97 2,3 dB Ratio Channel Separation VO = ±10V, RL = 2k 120 1 dB VOUT Output Voltage Swing RL ≥ 2k ±12.5 4 ±11.5 5,6 V Output Low, No Load 2 25 4 mV Output Low, 600Ω to GND 2 10 4 18 5,6 mV Output Low, ISINK = 1mA 2 350 4 mV Output High, No Load 2 4.0 4 V Output High, 600Ω to GND 2 3.4 4 3.1 5,6 V SR Slew Rate 0.2 4 V/µs IS Supply Current Per Amplifier 0.55 1 0.70 2,3 mA 2 0.50 1 0.65 2,3 mA Rev. F 2 For more information www.analog.com Document Outline Description Burn-In Circuit Package/Order Information Absolute Maximum Ratings Total Dose Bias Circuit Table 1: Electrical characteristics Table 1a: Electrical characteristics Table 2: Electrical Test Requirements Typical Performance Characteristics Revision History Rad Hard