Datasheet AD8512-EP (Analog Devices) - 4
| Hersteller | Analog Devices |
| Beschreibung | Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Dual Operational Amplifier |
| Seiten / Seite | 7 / 4 — AD8512-EP. Enhanced Product. ELECTRICAL CHARACTERISTICS. Table 2. … |
| Dateiformat / Größe | PDF / 205 Kb |
| Dokumentensprache | Englisch |
AD8512-EP. Enhanced Product. ELECTRICAL CHARACTERISTICS. Table 2. Parameter. Symbol. Test Conditions/Comments. Min. Typ. Max. Unit
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AD8512-EP Enhanced Product ELECTRICAL CHARACTERISTICS
VS = ±15 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 0.1 1.0 mV −55°C < TA < +125°C 1.8 mV Input Bias Current IB 25 80 pA −55°C < TA < +85°C 0.7 nA −55°C < TA < +125°C 10 nA Input Offset Current IOS 6 75 pA −55°C < TA < +85°C 0.3 nA −55°C < TA < +125°C 0.5 nA Input Capacitance Differential 12.5 pF Common Mode 11.5 pF Input Voltage Range −13.5 +13.0 V Common-Mode Rejection Ratio CMRR VCM = −12.5 V to +12.5 V 86 108 dB Large-Signal Voltage Gain AVO RL = 2 kΩ, VCM = 0 V, 115 196 V/mV VO = −13.5 V to +13.5 V Offset Voltage Drift ΔVOS/ΔT 1.7 12 µV/°C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 10 kΩ 14.0 14.2 V RL = 2 kΩ 13.8 14.1 V RL = 600 Ω 13.5 13.9 V RL = 600 Ω, −55°C < TA < +125°C 11.4 V Output Voltage Low VOL RL = 10 kΩ, −55°C < TA < +125°C −14.9 −14.6 V RL = 2 kΩ, −55°C < TA < +125°C –14.8 −14.5 V RL = 600 Ω −14.3 −13.8 V RL = 600 Ω, −55°C < TA < +125°C −12.1 V Output Current IOUT ±70 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±4.5 V to ±18 V 86 dB Supply Current/Amplifier ISY VO = 0 V 2.2 2.5 mA −55°C < TA < +125°C 2.6 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 20 V/µs Gain Bandwidth Product GBP 8 MHz Settling Time tS To 0.1%, 0 V to 10 V step, G = +1 0.5 µs To 0.01%, 0 V to 10 V step, G = +1 0.9 µs Total Harmonic Distortion (THD) + Noise THD + N 1 kHz, G = +1, RL = 2 kΩ 0.0005 % Phase Margin φM 52 Degrees NOISE PERFORMANCE Voltage Noise Density en f = 10 Hz 34 nV/√Hz f = 100 Hz 12 nV/√Hz f = 1 kHz 8.0 10 nV/√Hz f = 10 kHz 7.6 nV/√Hz Peak-to-Peak Voltage Noise en p-p 0.1 Hz to 10 Hz bandwidth 2.4 5.2 µV p-p Rev. 0 | Page 4 of 7 Document Outline Features Enhanced Product Features Applications Pin Configuration General Description Revision History Specifications Electrical Characteristics Absolute Maximum Ratings Thermal Resistance ESD Caution Typical Performance Characteristics Outline Dimensions Ordering Guide
VS = ±15 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 0.1 1.0 mV −55°C < TA < +125°C 1.8 mV Input Bias Current IB 25 80 pA −55°C < TA < +85°C 0.7 nA −55°C < TA < +125°C 10 nA Input Offset Current IOS 6 75 pA −55°C < TA < +85°C 0.3 nA −55°C < TA < +125°C 0.5 nA Input Capacitance Differential 12.5 pF Common Mode 11.5 pF Input Voltage Range −13.5 +13.0 V Common-Mode Rejection Ratio CMRR VCM = −12.5 V to +12.5 V 86 108 dB Large-Signal Voltage Gain AVO RL = 2 kΩ, VCM = 0 V, 115 196 V/mV VO = −13.5 V to +13.5 V Offset Voltage Drift ΔVOS/ΔT 1.7 12 µV/°C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 10 kΩ 14.0 14.2 V RL = 2 kΩ 13.8 14.1 V RL = 600 Ω 13.5 13.9 V RL = 600 Ω, −55°C < TA < +125°C 11.4 V Output Voltage Low VOL RL = 10 kΩ, −55°C < TA < +125°C −14.9 −14.6 V RL = 2 kΩ, −55°C < TA < +125°C –14.8 −14.5 V RL = 600 Ω −14.3 −13.8 V RL = 600 Ω, −55°C < TA < +125°C −12.1 V Output Current IOUT ±70 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±4.5 V to ±18 V 86 dB Supply Current/Amplifier ISY VO = 0 V 2.2 2.5 mA −55°C < TA < +125°C 2.6 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 20 V/µs Gain Bandwidth Product GBP 8 MHz Settling Time tS To 0.1%, 0 V to 10 V step, G = +1 0.5 µs To 0.01%, 0 V to 10 V step, G = +1 0.9 µs Total Harmonic Distortion (THD) + Noise THD + N 1 kHz, G = +1, RL = 2 kΩ 0.0005 % Phase Margin φM 52 Degrees NOISE PERFORMANCE Voltage Noise Density en f = 10 Hz 34 nV/√Hz f = 100 Hz 12 nV/√Hz f = 1 kHz 8.0 10 nV/√Hz f = 10 kHz 7.6 nV/√Hz Peak-to-Peak Voltage Noise en p-p 0.1 Hz to 10 Hz bandwidth 2.4 5.2 µV p-p Rev. 0 | Page 4 of 7 Document Outline Features Enhanced Product Features Applications Pin Configuration General Description Revision History Specifications Electrical Characteristics Absolute Maximum Ratings Thermal Resistance ESD Caution Typical Performance Characteristics Outline Dimensions Ordering Guide