Datasheet IRF540NS, IRF540NL (International Rectifier) - 6
| Hersteller | International Rectifier |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 11 / 6 — Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b |
| Dateiformat / Größe | PDF / 284 Kb |
| Dokumentensprache | Englisch |
Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b
Modelllinie für dieses Datenblatt
Textversion des Dokuments
IRF540NS/IRF540NL 400 15V ID TOP 6.5A 11.3A BOTTOM 16A L DRIVER VDS 300 RG D.U.T + - VDD I 200 AS A 20V t 0.01 p Ω
Fig 12a.
Unclamped Inductive Test Circuit 100 V(BR)DSS AS tp E , Single Pulse Avalanche Energy (mJ) 025 50 75 100 125 150 175 Starting T , Junction Temperature ( C ° ) J
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current IAS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V QG .3µF + VGS V D.U.T. DS Q - GS QGD VGS VG 3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit 6 www.irf.com
Fig 12a.
Unclamped Inductive Test Circuit 100 V(BR)DSS AS tp E , Single Pulse Avalanche Energy (mJ) 025 50 75 100 125 150 175 Starting T , Junction Temperature ( C ° ) J
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current IAS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V QG .3µF + VGS V D.U.T. DS Q - GS QGD VGS VG 3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit 6 www.irf.com