Datasheet IRF540NS, IRF540NL (International Rectifier) - 3
| Hersteller | International Rectifier |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 11 / 3 — Fig 1. Fig 2. Fig 3. Fig 4 |
| Dateiformat / Größe | PDF / 284 Kb |
| Dokumentensprache | Englisch |
Fig 1. Fig 2. Fig 3. Fig 4
Modelllinie für dieses Datenblatt
Textversion des Dokuments
IRF540NS/IRF540NL 1000 VGS 1000 VGS TOP 15V TOP 15V 10V 10V 8.0V 8.0V 7.0V 7.0V 6.0V 6.0V 5.5V 5.5V 5.0V 5.0V BOTTOM 4.5V BOTTOM 4.5V 100 100 4.5V 10 4.5V 10 I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D 20µs PULSE WIDTH 20µs PULSE WIDTH T = J 25 °C T = 175 J °C 1 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) DS V , Drain-to-Source Voltage (V) DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 3.5 ID = 33A ) 3.0 nt (A 2.5 urre C 2.0 T = 25 C J ° ource 100 -S 1.5 T = 175 C (Normalized) J ° rain-to 1.0 I , D D 0.5 (on) S V = DS 50V D 20µs PULSE WIDTH R , Drain-to-Source On Resistance V = GS 10V 0.0 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 4.0 5.0 6.0 7.0 8.0 9.0 T , Junction Temperature ( C ° ) V , Gate-to-Source Voltage (V) J GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 3.5 ID = 33A ) 3.0 nt (A 2.5 urre C 2.0 T = 25 C J ° ource 100 -S 1.5 T = 175 C (Normalized) J ° rain-to 1.0 I , D D 0.5 (on) S V = DS 50V D 20µs PULSE WIDTH R , Drain-to-Source On Resistance V = GS 10V 0.0 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 4.0 5.0 6.0 7.0 8.0 9.0 T , Junction Temperature ( C ° ) V , Gate-to-Source Voltage (V) J GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3