Datasheet IRF9510S, SiHF9510S (Vishay) - 2

IRF9510S, SiHF9510S
Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62 Maximum Junction-to-Ambient °C/W (PCB Mount)a RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 3.5
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = - 250 μA - 100 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.091 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = - 100 V, VGS = 0 V - - - 100 Zero Gate Voltage Drain Current IDSS μA VDS = - 80 V, VGS = 0 V, TJ = 150 °C - - - 500 Drain-Source On-State Resistance RDS(on) VGS = - 10 V ID = - 2.4 Ab - - 1.2 Forward Transconductance gfs VDS = - 50 V, ID = - 2.4 Ab 1.0 - - S
Dynamic
Input Capacitance Ciss - 200 - VGS = 0 V, Output Capacitance Coss VDS = - 25 V, - 94 - pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 18 - Total Gate Charge Qg - - 8.7 I Gate-Source Charge Qgs V D = - 4.0 A, VDS = - 80 V, GS = - 10 V - - 2.2 nC see fig. 6 and 13b Gate-Drain Charge Qgd - - 4.1 Turn-On Delay Time td(on) - 10 - Rise Time tr V - 27 - DD = - 50 V, ID = - 4.0 A, ns Rg = 24 , RD = 11 , see fig. 10b Turn-Off Delay Time td(off) - 15 - Fall Time tf - 17 - Between lead, D Internal Drain Inductance LD - 4.5 - 6 mm (0.25") from nH package and center of G Internal Source Inductance LS die contact - 7.5 - S
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous Source-Drain Diode Current IS D - - - 4.0 showing the integral reverse A G Pulsed Diode Forward Currenta ISM p - n junction diode - - - 16 S Body Diode Voltage VSD TJ = 25 °C, IS = - 4.0 A, VGS = 0 Vb - - - 5.5 V Body Diode Reverse Recovery Time trr - 82 160 ns TJ = 25 °C, IF = - 4.0 A, dI/dt = 100 A/μsb Body Diode Reverse Recovery Charge Qrr - 0.15 0.30 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. www.vishay.com Document Number: 91073 2 S11-1050-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000