Datasheet IRF7832 (International Rectifier) - 6
| Hersteller | International Rectifier |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 10 / 6 — Fig 12a. Fig 12c. Fig 12b. Fig 14a. Fig 13. Fig 14b |
| Dateiformat / Größe | PDF / 193 Kb |
| Dokumentensprache | Englisch |
Fig 12a. Fig 12c. Fig 12b. Fig 14a. Fig 13. Fig 14b
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IRF7832 600 15V ) J m( I D y 500 gr TOP 7.0A L DRIVER e 13A VDS n E BOTTOM 16A e 400 h c R n G D.U.T + a V l - DD a IAS A v 300 A 20V V GS e t 0.01Ω p sl u P 200 e
Fig 12a.
Unclamped Inductive Test Circuit l g ni S , 100 S V(BR)DSS AE tp 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C)
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current IAS LD VDS
Fig 12b.
Unclamped Inductive Waveforms VDD D.U.T Current Regulator VGS Same Type as D.U.T. Pulse Width < 1µs Duty Factor < 0.1% 50KΩ .2µF 12V .3µF
Fig 14a.
Switching Time Test Circuit +V D.U.T. DS - VDS 90% VGS 3mA 10% VGS I I G D td(on) tr td(off) tf Current Sampling Resistors
Fig 13.
Gate Charge Test Circuit
Fig 14b.
Switching Time Waveforms 6 www.irf.com
Fig 12a.
Unclamped Inductive Test Circuit l g ni S , 100 S V(BR)DSS AE tp 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C)
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current IAS LD VDS
Fig 12b.
Unclamped Inductive Waveforms VDD D.U.T Current Regulator VGS Same Type as D.U.T. Pulse Width < 1µs Duty Factor < 0.1% 50KΩ .2µF 12V .3µF
Fig 14a.
Switching Time Test Circuit +V D.U.T. DS - VDS 90% VGS 3mA 10% VGS I I G D td(on) tr td(off) tf Current Sampling Resistors
Fig 13.
Gate Charge Test Circuit
Fig 14b.
Switching Time Waveforms 6 www.irf.com