Datasheet IRF7832 (International Rectifier) - 3
| Hersteller | International Rectifier |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 10 / 3 — Fig 1. Fig 2. Fig 3. Fig 4 |
| Dateiformat / Größe | PDF / 193 Kb |
| Dokumentensprache | Englisch |
Fig 1. Fig 2. Fig 3. Fig 4
Modelllinie für dieses Datenblatt
Textversion des Dokuments
IRF7832 1000 1000 VGS VGS TOP 10V TOP 10V 5.0V ) 5.0V A 4.5V ) 100 4.5V ( 3.5V A t ( 3.5V n 3.0V t 3.0V e n r 2.7V r er 2.7V u 2.5V r 100 u 2.5V C BOTTOM 2.25V 10 C BOTTOM 2.25V e c e r c u r o u S o - S o 1 - t- ot n - i n a i 10 r 2.25V ar D 2.25V , D 0.1 , I D I D 20µs PULSE WIDTH 20µs PULSE WIDTH Tj = 25°C Tj = 150°C 0.01 1 0.1 1 10 100 1000 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.0 e c I n D = 16A at ) s V Α i GS = 4.5V ( s e t 100 R 1.5 n e n r T r J = 150°C O u e C cr ) e u d cr o e u 10 S zi 1.0 l o - a S o - T t- m o J = 25°C r t n - i o n a i r N( a r D D 1 , 0.5 , ) n I D o V ( DS = 15V S 20µs PULSE WIDTH D R 0 0.0 2.0 2.5 3.0 3.5 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 V T GS, Gate-to-Source Voltage (V) J, Junction Temperature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.0 e c I n D = 16A at ) s V Α i GS = 4.5V ( s e t 100 R 1.5 n e n r T r J = 150°C O u e C cr ) e u d cr o e u 10 S zi 1.0 l o - a S o - T t- m o J = 25°C r t n - i o n a i r N( a r D D 1 , 0.5 , ) n I D o V ( DS = 15V S 20µs PULSE WIDTH D R 0 0.0 2.0 2.5 3.0 3.5 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 V T GS, Gate-to-Source Voltage (V) J, Junction Temperature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3