Datasheet SI4480EY (Vishay)
| Hersteller | Vishay |
| Beschreibung | N-Channel 80-V (D-S) MOSFET |
| Seiten / Seite | 5 / 1 — Si4480EY. Vishay Siliconix. N-Channel 80-V (D-S) MOSFET. VDS (V). rDS(on) … |
| Dateiformat / Größe | PDF / 53 Kb |
| Dokumentensprache | Englisch |
Si4480EY. Vishay Siliconix. N-Channel 80-V (D-S) MOSFET. VDS (V). rDS(on) (. ID (A). SO-8. Parameter. Symbol. Limit. Unit. Typical. Maximum. 2-1
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Si4480EY Vishay Siliconix N-Channel 80-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (
W
) ID (A)
0.035 @ VGS = 10 V 6.2 80 0.040 @ VGS = 6.0 V 5.8 D
SO-8
S D 1 8 S 2 7 D G S 3 6 D G 4 5 D Top View S Ordering Information: Si4480EY Si4480EY-T1 (with Tape and Reel) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS "20 TA = 25_C 6.2 Continuous Drain Current Continuous Drain Current (TJ = 175 J _ = 175 C)a, _C) b ID I TA = 70_C 5.2 A Pulsed Drain Current IDM 40 Continuous Source Current (Diode Conduction)a, b IS 2.5 TA = 25_C 3 Maximum Power Dissipationa, Maximum Power Dissipation b PD P W D TA = 70_C 2.1 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 _C THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t v 10 sec 40 50 M i J ti t A bi ta Maximum Junction-to-Ambient RthJA Steady State 85 100 _C/W Maximum Junction-to-Lead Steady State RthJL 20 24 Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. t v 10 sec. Document Number: 71060 www.vishay.com S-03951—Rev. B, 26-May-03
2-1
Document Outline Datasheet Disclaimer Datasheet Disclaimer
PRODUCT SUMMARY
VDS (V) rDS(on) (
W
) ID (A)
0.035 @ VGS = 10 V 6.2 80 0.040 @ VGS = 6.0 V 5.8 D
SO-8
S D 1 8 S 2 7 D G S 3 6 D G 4 5 D Top View S Ordering Information: Si4480EY Si4480EY-T1 (with Tape and Reel) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS "20 TA = 25_C 6.2 Continuous Drain Current Continuous Drain Current (TJ = 175 J _ = 175 C)a, _C) b ID I TA = 70_C 5.2 A Pulsed Drain Current IDM 40 Continuous Source Current (Diode Conduction)a, b IS 2.5 TA = 25_C 3 Maximum Power Dissipationa, Maximum Power Dissipation b PD P W D TA = 70_C 2.1 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 _C THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t v 10 sec 40 50 M i J ti t A bi ta Maximum Junction-to-Ambient RthJA Steady State 85 100 _C/W Maximum Junction-to-Lead Steady State RthJL 20 24 Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. t v 10 sec. Document Number: 71060 www.vishay.com S-03951—Rev. B, 26-May-03
2-1
Document Outline Datasheet Disclaimer Datasheet Disclaimer