Datasheet GS66508T (GaN Systems) - 9
| Hersteller | GaN Systems |
| Beschreibung | 650V Enhancement Mode GaN Transistor |
| Seiten / Seite | 17 / 9 — Test Circuits. VDS. 90%. 10%. VGS. td(on). td(off) |
| Dateiformat / Größe | PDF / 1.0 Mb |
| Dokumentensprache | Englisch |
Test Circuits. VDS. 90%. 10%. VGS. td(on). td(off)
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GS66508T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet
Test Circuits VDS
VDD
90%
RL VDS D VGS RG G DUT
10%
S
VGS t t r f td(on) td(off)
Figure 15: GS66508T switching time test circuit and waveforms Figure 16: GS66508T Switching Loss Test Circuit Rev 180424 © 2009-2018 GaN Systems Inc. 9 This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. Submit datasheet feedback
Test Circuits VDS
VDD
90%
RL VDS D VGS RG G DUT
10%
S
VGS t t r f td(on) td(off)
Figure 15: GS66508T switching time test circuit and waveforms Figure 16: GS66508T Switching Loss Test Circuit Rev 180424 © 2009-2018 GaN Systems Inc. 9 This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. Submit datasheet feedback